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2N3859A_02 PDF预览

2N3859A_02

更新时间: 2024-09-15 03:56:11
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 放大器
页数 文件大小 规格书
3页 59K
描述
NPN General Purpose Amplifier

2N3859A_02 数据手册

 浏览型号2N3859A_02的Datasheet PDF文件第2页浏览型号2N3859A_02的Datasheet PDF文件第3页 
2N3859A  
NPN General Purpose Amplifier  
This device designed for use as general purpose amplifier and  
switches requiring collector currents to 300mA.  
Sourced from Process 10.  
See PN100 for characteristics.  
TO-92  
1. Emitter 2. Collector 3. Base  
1
NPN Epitaxial Silicon Transistor  
Absolute Maximum Ratings* T =25°C unless otherwise noted  
a
Symbol  
Parameter  
Value  
60  
Units  
V
V
V
V
Collector-Emitter Voltage  
Collector-Base Voltage  
Emitter-Base Voltage  
Collector Current  
CEO  
60  
V
CBO  
EBO  
6.0  
V
I
- Continuous  
500  
mA  
°C  
C
T , T  
Operating and Storage Junction Temperature Range  
-55 ~ +150  
J
ST  
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.  
NOTES:  
1) These ratings are based on a maximum junction temperature of 150 degrees C.  
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.  
Electrical Characteristics T =25°C unless otherwise noted  
a
Symbol  
Parameter  
Test Condition  
Min.  
Typ.  
Max.  
Units  
Off Characteristics  
BV  
BV  
BV  
Collector-Emitter Breakdown Voltage  
Collector-Base Breakdown Voltage  
Emitter-Base Breakdown Voltage  
Collector Cut-off Current  
I
I
I
= 1.0mA, I = 0  
60  
60  
V
V
(BR)CEO  
(BR)CBO  
(BR)EBO  
C
C
E
B
= 100µA, I = 0  
E
= 100µA, I = 0  
6.0  
V
C
I
I
V
V
= 18V, I = 0  
0.5  
0.5  
µA  
µA  
CBO  
EBO  
CB  
EB  
E
Emitter Cut-off Current  
= 4.0V, I = 0  
C
On Characteristics *  
DC Current Gain  
h
V
V
= 1.0V, I = 1.0mA  
75  
100  
FE  
CE  
CE  
C
= 1.0V, I = 1.0mA  
200  
C
Small Signal Characteristics  
C
Current Gain Bandwidth Product  
Output Capacitance  
V
= 10V, f = 1.0MHz  
4
pF  
MHz  
pS  
ob  
CB  
f
I
= 2.0mA, V = 10V  
90  
250  
150  
T
C
CE  
rb’C  
Collector-Base Time Constant  
V
= 10V, I = 2.0mA  
CE C  
c
f = 31.9MHz  
* Pulse Test: Pulse 300µs, Duty Cycle 2.0%  
Thermal Characteristics T =25°C unless otherwise noted  
A
Symbol  
Parameter  
Max.  
Units  
P
Total Device Dissipation  
Derate above 25°C  
625  
5.0  
mW  
mW/°C  
D
R
R
Thermal Resistance, Junction to Case  
Thermal Resistance, Junction to Ambient  
83.3  
200  
°C/W  
°C/W  
θJC  
θJA  
©2002 Fairchild Semiconductor Corporation  
Rev. B, July 2002  

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