品牌 | Logo | 应用领域 |
MICRO-ELECTRONICS | / | |
页数 | 文件大小 | 规格书 |
1页 | 147K | |
描述 | ||
Small Signal Bipolar Transistor, 0.1A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, TO-92B, 3 PIN |
生命周期: | Contact Manufacturer | 零件包装代码: | TO-92 |
包装说明: | CYLINDRICAL, O-PBCY-T3 | 针数: | 3 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
HTS代码: | 8541.21.00.75 | 风险等级: | 5.54 |
Is Samacsys: | N | 最大集电极电流 (IC): | 0.1 A |
集电极-发射极最大电压: | 30 V | 配置: | SINGLE |
最小直流电流增益 (hFE): | 100 | JEDEC-95代码: | TO-92 |
JESD-30 代码: | O-PBCY-T3 | 元件数量: | 1 |
端子数量: | 3 | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | ROUND |
封装形式: | CYLINDRICAL | 极性/信道类型: | NPN |
最大功率耗散 (Abs): | 0.62 W | 认证状态: | Not Qualified |
子类别: | Other Transistors | 表面贴装: | NO |
端子形式: | THROUGH-HOLE | 端子位置: | BOTTOM |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 140 MHz |
Base Number Matches: | 1 |
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2N3858 | GE |
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2N3858A | CDIL |
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General Purpose Bipolar Transistor | |
2N3859 | CENTRAL |
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Transistor | |
2N3859 | NJSEMI |
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2N3859A | GE |
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SILICON TRANSISTORS |