是否无铅: | 含铅 | 是否Rohs认证: | 不符合 |
生命周期: | Obsolete | 包装说明: | POST/STUD MOUNT, O-MUPM-X3 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
HTS代码: | 8541.29.00.95 | 风险等级: | 5.57 |
最大集电极电流 (IC): | 5 A | 集电极-发射极最大电压: | 80 V |
配置: | SINGLE | 最小直流电流增益 (hFE): | 30 |
JEDEC-95代码: | TO-59 | JESD-30 代码: | O-MUPM-X3 |
JESD-609代码: | e0 | 元件数量: | 1 |
端子数量: | 3 | 封装主体材料: | METAL |
封装形状: | ROUND | 封装形式: | POST/STUD MOUNT |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | NPN |
认证状态: | Not Qualified | 表面贴装: | NO |
端子面层: | TIN LEAD | 端子形式: | UNSPECIFIED |
端子位置: | UPPER | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管元件材料: | SILICON |
型号 | 品牌 | 描述 | 获取价格 | 数据表 |
2N3851E3 | MICROSEMI | Power Bipolar Transistor, 5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-59, Metal, 3 |
获取价格 |
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2N3852 | ETC | TRANSISTOR | BJT | NPN | 40V V(BR)CEO | 5A I(C) | TO-210AA |
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|
2N3852E3 | MICROSEMI | Power Bipolar Transistor, 5A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-59, Metal, 3 |
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|
2N3853 | ETC | TRANSISTOR | BJT | NPN | 40V V(BR)CEO | 5A I(C) | TO-210AA |
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2N3853E3 | MICROSEMI | Power Bipolar Transistor, 5A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-59, Metal, 3 |
获取价格 |
|
2N3854 | NJSEMI | SILICON TRANSISTORS |
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