Datasheet > 2KK5121

2KK5121

更新时间： 2024-11-18 18:09:51

品牌	Logo	应用领域
科信 - KEXIN		/
页数	文件大小	规格书
4页	200K
描述
Dual N-MOSFETs

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数据手册

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2KK5121 数据手册

SMD Type

MOSFET

Dual N-Channel MOSFET

2KK5121

(

)

Unit : mm

SOT-23-6

+0.1

-0.1

0.4

■ Features

● BVDSS = 30 V

● ID = 3.7 A

● RDS(ON) = 40 mΩ(Typ.) @ VGS = 10 V

● Advanced High Cell Density Trench technology

● Super Low Gate Charge

+0.02

-0.02

0.15

+0.01

-0.01

+0.2

-0.1

4 Drain2

5 Source1

6 Drain1

1 Gate1

2 Source2

3 Gate2

Top View

■ Absolute Maximum Ratings (T

= 25℃ unless otherwise stated)

Parameter

Symbol

Rating

Unit

Drain-Source Voltage

Gate-Source Voltage

±20

=25℃

3.7

Continuous Drain Current (Note 1)

Pulsed Drain Current (Note 2)

=70℃

3.0

Thermal Resistance, Junction- to-Ambient (Note 1)

Thermal Resistance, Junction- to-Case (Note 1)

Power Dissipation (Note 3)

θJA

θJC

110

℃/W

1.15

150

Junction Temperature

℃

Storage Temperature Range

stg

-55 to 150

Notes:

1. The data tested by surface mounted on a 1 inch²FR-4 board with 2OZ copper.

2. The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%.

3. The power dissipation is limited by 150℃ junction temperature.

4. The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.

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