Datasheet > 2KK5401DFN

2KK5401DFN

更新时间： 2024-06-27 12:13:31

品牌	Logo	应用领域
科信 - KEXIN		/
页数	文件大小	规格书
5页	302K
描述
N-Channel MOSFET

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中文翻译

获取价格

数据手册

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2KK5401DFN 数据手册

SMD Type

MOSFET

N-Channel MOSFET

2KK5401DFN

■ Features

PDFN5x6-8

● VDS (V) = 100 V

●

ID = 100 A

● RDS(ON) (at VGS = 10 V) = 3.8 mΩ (Typ.)

● 100% EAS Guaranteed

● Super Low Gate Charge

● Excellent CdV/dt effect decline

● Advanced high cell density Trench technology

■ Absolute Maximum Ratings (T

= 25℃ unless otherwise noted)

Parameter

Symbol

Rating

100

Unit

Drain-Source Voltage

Gate-Source Voltage

VDS

±20

Package Limited

100

Continuous Drain Current

= 100℃

Pulsed Drain Current (Note 1)

Power Dissipation

400

132

= 25℃

100

= 100℃

Single Pulse Avalanche Energy (Note 2)

231

Thermal Resistance.Junction- to-Ambient

Thermal Resistance.Junction- to-Case

Junction Temperature

θJA

θJC

℃/W

0.95

150

℃

Storage Temperature Range

Notes:

stg

-55 to 150

1. Repetitive Rating: Pulse width limited by maximum junction temperature.

2. VDD=50V,VGS=10V,L=0.1mH,IAS=48A.,R =25Ω,Starting T =25℃.

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