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2KK5783DFN

更新时间: 2024-09-18 18:09:31
品牌 Logo 应用领域
科信 - KEXIN /
页数 文件大小 规格书
5页 251K
描述
Dual N-MOSFETs

2KK5783DFN 数据手册

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SMD Type  
MOSFET  
Dual N-Channel MOSFET  
2KK5783DFN  
PDFN3.3x3.3-8_Dual  
Top View  
Bottom View  
Features  
VDS (V) = 40 V  
ID = 35 A (at VGS = 10 V)  
RDS(ON) (at VGS = 10 V) < 15 mΩ  
RDS(ON) (at VGS = 4.5 V) < 19 mΩ  
Top View  
1
2
3
4
8
S1  
G1  
S2  
G2  
D1  
7
6
5
D1  
D2  
D2  
D
D
G
G
S
S
Absolute Maximum Ratings (TA = 25unless otherwise noted)  
Parameter  
Drain-Source Voltage  
Symbol  
Rating  
40  
Unit  
V
V
V
DS  
GS  
Gate-Source Voltage  
±20  
35  
T
A
=25℃  
Continuous Drain Current (Note 1, 3)  
Pulsed Drain Current (Note 2)  
Power Dissipation  
ID  
A
TA  
=100℃  
27  
IDM  
70  
TA  
=25℃  
25  
P
D
W
TA  
=100℃  
9
Junction Temperature  
Storage Temperature Range  
Notes:  
T
J
150  
Tstg  
-55 to 150  
1. The value of RθJA is measured with the device mounted on 1in² FR-4 board with 2oz. Copper, in a still air environment  
with T =25°C. The value in any givenapplication depends on the user's specific board design.  
A
2. Repetitive rating, pulse width limited by junction temperature.  
3. The current rating is based on the t10s junction to ambient thermal resistance rating.  
1
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