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2KK5126 PDF预览

2KK5126

更新时间: 2024-11-18 18:09:07
品牌 Logo 应用领域
科信 - KEXIN /
页数 文件大小 规格书
4页 216K
描述
Dual N-MOSFETs

2KK5126 数据手册

 浏览型号2KK5126的Datasheet PDF文件第2页浏览型号2KK5126的Datasheet PDF文件第3页浏览型号2KK5126的Datasheet PDF文件第4页 
SMD Type  
MSFET  
Dual N-Channel MOSFET  
2KK5126  
SOP-8  
Features  
BVDSS = 40 V  
ID (at VGS = 10 V) = 15 A  
RDS(ON) (at VGS = 10 V) < 13 mΩ  
RDS(ON) (at VGS = 4.5 V) < 19 mΩ  
Low On-resistance  
0.15  
1.50  
5 Drain2  
6 Drain2  
7 Drain1  
8 Drain1  
1 Source1  
Simple Drive Requirement  
Fast Switching Characteristic  
2 Gate1  
3 Source2  
4 Gate2  
Absolute Maximum Ratings (Tj = 25nlestherwisnoted)  
Parameter  
Symbol  
Rating  
Unit  
Drain-Source Voltage  
Gate-Source Voltage  
V
DS  
GS  
40  
V
V
±20  
T
A
=25℃  
=70℃  
15  
C
ID  
Continuous Drain Current  
TA  
12  
A
A
Pulsed Drain Current  
I
DM  
AS  
AS  
50  
C
I
34  
Avalanche Current  
Avalanche Energy L = 0.05 mH C  
E
29  
mJ  
W
Power Dissipation  
T
A
=25℃  
=25℃  
=70℃  
P
D
2.5  
TA  
6
Power Dissipation A  
P
DSM  
TA  
3.8  
Thermal Resistance.Junction- to-Ambient  
R
θJA  
θJC  
50  
5
/W  
Thermal Resistance.Junction- to-Case  
Junction Temperature  
Steady-State  
R
T
J
150  
Storage Temperature Range  
T
stg  
-55 to 150  
1
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