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2KK5138CSP PDF预览

2KK5138CSP

更新时间: 2024-11-18 18:09:55
品牌 Logo 应用领域
科信 - KEXIN /
页数 文件大小 规格书
3页 243K
描述
Dual N-MOSFETs

2KK5138CSP 数据手册

 浏览型号2KK5138CSP的Datasheet PDF文件第2页浏览型号2KK5138CSP的Datasheet PDF文件第3页 
SMD Type  
MOSFET  
12V 2.4mohm Dual N-channel Trench MOSFET  
2KK5138CSP  
WLCSP - 2.92 X 1.43-10L  
Features  
VSS = 12 V  
IS = 13 A  
Trench MOSFET technology  
Extremely Low RSS(ON)  
ESD HBM Class 2  
Common Drain Design  
G1  
G2  
S2  
Equivalent circuit  
S1  
Absolute Maximum Ratings (TA = 25unless otherwise noted)  
Parameter  
Source - Source Voltage  
Symbol  
VSS  
Rating  
12  
Unit  
V
Gate-Source Voltage  
VGS  
±8  
13  
TC = 25  
Source Current - Continuous (Note 1)  
IS  
A
10  
TC = 100℃  
Source Current - Pulsed (Note 2)  
ISM  
PD  
52  
Power Dissipation  
0.5  
W
TC = 25℃  
Thermal Resistance. Junction to Ambient (Note 3)  
Junction Temperature  
RθJA  
TJ  
250  
/W  
150  
Storage Temperature Range  
Notes:  
Tstg  
-55 to 150  
1. The max Source current rating base on silicon  
2. Pulse Test: Pulse width 300 us, Duty cycle 2%  
3. Mount on 1X1 inch 2oz FR - 4 PCB  
1
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