Datasheet > 2KK5778DFN

2KK5778DFN

更新时间： 2024-10-15 18:09:39

品牌	Logo	应用领域
科信 - KEXIN		/
页数	文件大小	规格书
5页	520K
描述
N-Channel MOSFET

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中文翻译

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数据手册

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2KK5778DFN 数据手册

SMD Type

MOSFET

N-Channel MOSFET

2KK5778DFN

PDFN3.3x3.3-8

Top View

Bottom View

■ Features

● VDS (V) = 60 V

●

ID = 41 A @ VGS=10V

● RDS(ON) = 7.5mΩ (typ.) @ VGS=10V

● RDS(ON) = 9.4mΩ (typ.) @ VGS=4.5V

Pin 1

Top View

■ Absolute Maximum Ratings (T

= 25℃ unless otherwise noted)

Parameter

Drain-Source Voltage

Symbol

Rating

Unit

Gate-Source Voltage

±20

=25℃

Continuous Drain Current (1)

=100℃

Pulsed Drain Current (2)

147

Avalanche Current, Single pulse (3)

Avalanche Energy, Single pulse (3)

=25℃

Power Dissipation (4)

=100℃

11.1

4.5

Thermal Resistance.Junction- to-Case

Thermal Resistance.Junction- to-Ambient

Junction Temperature

θJC

θJA

℃/W

150

℃

Storage Temperature Range

Tstg

-55 to 150

Notes 1. Computed continuous current assumes the condition of TJ_Max while the actual continuous current depends on the

thermal & electro-mechanical application board design.

2. This single-pulse measurement was taken under TJ_Max = 150°C.

3. This single-pulse measurement was taken under the following condition (L =100μH, VGS = 10V, VDS = 30V) while its

value is limited by TJ_Max = 150°C.

4. The power dissipation PD is based on TJ_Max= 150°C.

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