Datasheet > 2KK5123DFN

2KK5123DFN

更新时间： 2024-10-15 18:09:19

品牌	Logo	应用领域
科信 - KEXIN		/
页数	文件大小	规格书
5页	471K
描述
Dual N-MOSFETs

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中文翻译

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数据手册

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2KK5123DFN 数据手册

SMD Type

MOSFET

Dual N-Channel MOSFET

2KK5123DFN

■ Features

DFN3×2-6

● VDS (V) = 18 V

●

ID = 12 A

● RDS(ON) = 6.2 mΩ (at VGS = 4.5 V, Typ.)

● RDS(ON) = 6.4 mΩ (at VGS = 4.0 V, Typ.)

● RDS(ON) = 6.8 mΩ (at VGS = 3.8 V, Typ.)

● RDS(ON) = 7.2 mΩ (at VGS = 3.1 V, Typ.)

● RDS(ON) = 8.2 mΩ (at VGS = 2.5 V, Typ.)

G2 S2

D1/D2

G1 S1

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■ Absolute Maximum Ratings (T

= 25℃ unless otherwise noted)

Parameter

Symbol

Rating

Unit

Drain-Source Voltage

Gate-Source Voltage

±12

Continuous Drain Current (1)

Pulsed Drain Current (2)

Power Dissipation (1)

Thermal Resistance.Junction- to-Ambient (3)

Junction Temperature

θJA

62.5

150

℃/W

℃

Storage Temperature Range

Notes:

stg

-55 to 150

1. T

2. P

3. The value of RθJA is measured with the device mounted on 1 in ²FR-4 board with 2oz. Copper, in a still air environment

with T =25℃,t ≤10sec.

C=25℃ Limited only by maximum temperature allowed.

W≤10μs, Duty cycle≤1%.

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