Datasheet > 2KK5125DFN

2KK5125DFN

更新时间： 2024-11-18 18:09:11

品牌	Logo	应用领域
科信 - KEXIN		/
页数	文件大小	规格书
5页	530K
描述
N-Channel MOSFET

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中文翻译

获取价格

数据手册

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2KK5125DFN 数据手册

SMD Type

MOSFET

N-Channel MOSFET

2KK5125DFN

PDFN5x6-8

■ Features

● VDS (V) = 60 V

●

ID = 80 A

● RDS(ON) (at VGS = 10 V) < 6 mΩ

● RDS(ON) (at VGS = 4.5 V) < 11 mΩ

■ Absolute Maximum Ratings (T

= 25℃ unless otherwise noted)

Parameter

Drain-Source Voltage

Symbol

Rating

Unit

Gate-Source Voltage

±20

= 25℃

Continuous Drain Current ^A

= 100℃

Pulsed Drain Current

IDM

300

Single Pulse Avalanche Energy

Power Dissipation ^D

500

120

Thermal Resistance, Junction- to-Ambient

Thermal Resistance, Junction- to-Case

Junction Temperature

θJA

θJC

℃/W

1.04

150

℃

Storage Temperature Range

Notes:

Tstg

-55 to 150

A. The maximum current rating is package limited.

B. Repetitive rating; pulse width limited by max. junction temperature.

C. VDD=50 V, RG=25 Ω, L=0.5mH, starting Tj=25 ℃.

D. P is based on max. junction temperature, using junction-case thermal resistance.

E.The value of RθJA is measured with the device mounted on 1in²FR-4 board with 2oz. Copper, in a still air environment

with Ta=25 ℃.

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