Datasheet > 2KK5135DFN

2KK5135DFN

更新时间： 2024-11-18 18:09:11

品牌	Logo	应用领域
科信 - KEXIN		/
页数	文件大小	规格书
4页	407K
描述
N-Channel MOSFET

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中文翻译

获取价格

数据手册

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2KK5135DFN 数据手册

SMD Type

MOSFET

N-Channel MOSFET

2KK5135DFN

DFN5x6-8

■ Features

● VDS (V) = 60 V

●

ID = 80 A

● RDS(ON) (at VGS = 10 V) < 4.2 mΩ

● RDS(ON) (at VGS = 4.5 V) < 5.2 mΩ

■ Absolute Maximum Ratings (T

= 25℃ unless otherwise noted)

Parameter

Drain-Source Voltage

Symbol

Rating

Unit

±20

Gate-Source Voltage

= 25℃

Continuous Drain Current ^A

= 100℃

Pulsed Drain Current

320

450

Single Pulse Avalanche Energy

= 25℃

Power Dissipation ^D

= 100℃

t≤10s

θJA

θJC

Thermal Resistance, Junction- to-Ambient

℃/W

Steady-State

Thermal Resistance, Junction- to-Case

Junction and Storage Temperature Range

Notes:

1.47

-55 to 150

TJ,

Tstg

℃

A. The maximum current rating is package limited.

B. Repetitive rating; pulse width limited by max. junction temperature.

C. VDD=50 V, R =25 Ω, L=0.5mH, starting T=25 ℃.

D. P is based on max. junction temperature, using junction-case thermal resistance.

E.The value of RθJA is measured with the device mounted on 1in²FR-4 board with 2oz. Copper, in a still air environment

with Ta=25 ℃.

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