Datasheet > 2KK5141

2KK5141

更新时间： 2024-11-18 18:10:03

品牌	Logo	应用领域
科信 - KEXIN		/
页数	文件大小	规格书
5页	454K
描述
N-Channel MOSFET

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中文翻译

获取价格

数据手册

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2KK5141 数据手册

SMD Type

MOSFET

N-Channel MOSFET

2KK5141

SOP-8

■ Features

● VDS = 100 V

● I

D (at VGS = 10 V) = 12 A

● RDS(ON) (at VGS = 10 V) < 15 mΩ

● R^DS(ON)(at V^GS= 4.5 V) < 22.5 mΩ

0.15

1.50

● Optimized for high-speed smooth switching

● Excellent Gate Charge × RDSON (FOM)

● Very low on-resistance

5 Drain

6 Drain

7 Drain

8 Drain

1 Source

2 Source

3 Source

4 Gate

■ Absolute Maximum Ratings (T = 25℃ unless otherwise noted)

Parameter

Symbol

Rating

100

±20

Unit

Drain-Source Voltage

Gate-Source Voltage

=25℃

=70℃

Continuous Drain Current

9.5

Pulsed Drain Current ^C

Avalanche Current ^C

12.6

Avalanche Energy, L = 0.1 mH ^C

3.1

2.0

=25℃

=70℃

Power Dissipation ^B

Thermal Resistance, Junction- to-Ambient ^A

Thermal Resistance, Junction- to-Ambient ^{A D}

Thermal Resistance, Junction- to-Lead

Junction Temperature

t ≤ 10s

θJA

θJL

Steady-State

℃/W

150

℃

Storage Temperature Range

Notes:

stg

-55 to 150

A. The value of RθJA is measured with the device mounted on 1in²FR-4 board with 2oz. Copper, in a still air environment with

=25°C. The value in any given application depends on the user's specific board design.

B. The power dissipation P is based on TJ(MAX)=150°C, using ≤10s junction-to-case thermal resistance.

C. Repetitive rating, pulse width limited by junction temperature T^J(MAX)=150°C. Ratings are based on low frequency and duty

cycles to keep initial T =25°C

D. The RθJA is the sum of the thermal impedance from junction to lead RθJL and case to ambient.

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