Datasheet > 2KK5132DFN

2KK5132DFN

更新时间： 2024-11-18 18:10:03

品牌	Logo	应用领域
科信 - KEXIN		/
页数	文件大小	规格书
6页	305K
描述
N-Channel MOSFET

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中文翻译

获取价格

数据手册

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2KK5132DFN 数据手册

SMD Type

MOSFET

N-Channel MOSFET

2KK5132DFN

PDFN5x6-8

■ Features

● VDS = 30 V

●

ID (at VGS=10V) = 60 A

● RDS(ON) (at VGS = 10 V) < 5.2 mΩ

● RDS(ON) (at VGS = 4.5 V) < 8.6 mΩ

● 100% UIS Tested

● 100% Rg Tested

■ Absolute Maximum Ratings (T

= 25℃ unless otherwise noted)

Parameter

Symbol

Rating

Unit

Drain-Source Voltage

Gate-Source Voltage

±20

= 25℃

Continuous Drain Current

= 100℃

Pulsed Drain Current (Note 2)

Continuous Drain Current

100

= 25℃

= 70℃

IDSM

Avalanche Current (Note 2)

IAS

Avalanche Energy L = 0.05mH (Note 2)

Thermal Resistance, Junction- to-Ambient (Note 5)

Thermal Resistance, Junction- to-Case

θJA

θJC

℃/W

= 25℃

= 100℃

= 25℃

= 70℃

Power Dissipation (Note 4)

Power Dissipation (Note 5)

6.2

DSM

Junction Temperature

150

℃

Storage Temperature Range

Notes:

Tstg

-55 to 150

1. The maximum current rating is package limited.

2. Single pulse width limited by junction temperature TJ(MAX)=150°C.

3. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient.

4. The power dissipation P is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in

setting the upper dissipation limit for cases where additional heatsinking is used.

5. The value of RθJA is measured with the device mounted on 1in²FR-4 board with 2oz. Copper, in a still air environment with

=25°C. The Power dissipation PDSM is based on RθJA t≤ 10s and the maximum allowed junction temperature of 150°C.

The value in any given application depends on the user's specific board design.

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