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2KK5781 PDF预览

2KK5781

更新时间: 2024-11-18 18:09:23
品牌 Logo 应用领域
科信 - KEXIN /
页数 文件大小 规格书
4页 362K
描述
N-Channel MOSFET

2KK5781 数据手册

 浏览型号2KK5781的Datasheet PDF文件第2页浏览型号2KK5781的Datasheet PDF文件第3页浏览型号2KK5781的Datasheet PDF文件第4页 
SMD Type  
MOSFET  
N-Channel MOSFET  
2KK5781  
Features  
VDS (V) = 25 V  
ID = 0.75 A  
RDS(ON) < 350mΩ (VGS = 4.5V)  
RDS(ON) 400mΩ (VGS = 2.7V)  
ESD Protection  
3
1.Gate  
2.Source  
3.Drain  
1
2
Absolute Maximum Ratings (T  
J
= 25°C unless otherwise noted)  
Symbol  
Parameter  
Drain-Source Voltage  
Rating  
25  
Unit  
V
V
V
DS  
GS  
Gate-Source Voltage  
±8  
T
A
= 25℃  
0.75  
0.6  
Continuous Drain Current  
ID  
A
TA = 70℃  
Pulsed Drain Current (tp=10μs)  
IDM  
3
Power Dissipation (Note 1)  
P
D
0.28  
450  
W
/W  
A
Thermal Resistance.Junction- to-Ambient (Note 1)  
RθJA  
Source Current (Body Diode) (Note 1)  
ESD Rating Machine Model  
Junction Temperature  
IS  
0.3  
V
ESD  
250  
V
T
J
150  
Storage Temperature Range  
Tstg  
-55 to 150  
Note 1. Surface mounted on FR4 board using 1 in sq pad size. (Cu area = 1.127 in sq [1 oz] including traces).  
1
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