Datasheet > 1SS367

1SS367

更新时间： 2024-10-15 14:55:15

品牌	Logo	应用领域
先科 - SWST		肖特基二极管
页数	文件大小	规格书
3页	270K
描述
肖特基二极管

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

1SS367 数据手册

1SS367

Silicon Epitaxial Schottky Barrier Diode

PINNING

DESCRIPTION

Cathode

Features

• Low forward voltage

Anode

Applications

• High Speed Switching

Top View

Simplified outline SOD-323 and symbol

Absolute Maximum Ratings (T_a= 25℃)

Parameter

Symbol

Value

Unit

Maximum (Peak) Reverse Voltage

Reverse Voltage

V_RM

V_R

Average Rectified Forward Current

Maximum (Peak) Forward Current

Surge Current (10 ms)

I_F(AV)

I_FM

100

200

I_FSM

P_tot

T_J

Power Dissipation

200

℃

Junction Temperature

125

Operating Temperature Range

Storage Temperature Range

T_opr

T_stg

- 40 to + 100

- 55 to + 125

℃

Thermal Characteristics

Parameter

Symbol

R_θJA

Max.

500

Unit

Thermal Resistance Junction to Ambient ¹⁾

¹⁾Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.

℃/W

Characteristics at T_a= 25℃

Parameter

Reverse Breakdown Voltage

at I_R= 100 μA

Symbol

V_(BR)R

Min.

Max.

Unit

Forward Voltage

at I_F= 5 mA

at I_F= 100 mA

V_F

0.3

0.5

Reverse Current

at V_R= 10 V

I_R

µA

Total Capacitance

at V_R= 4 V, f = 1 MHz

C_T

1 / 3

Dated : 03/05/2022 Rev:02

12 3

中文翻译

下载PDF

与1SS367相关器件

型号	品牌	获取价格	描述	数据表
1SS367,H3F(B	TOSHIBA	获取价格	Rectifier Diode
1SS367_07	TOSHIBA	获取价格	High Speed Switching Application
1SS368	TOSHIBA	获取价格	DIODE (ULTRA HIGH SPEED SWITCHING APPLICATION)
1SS368	KEXIN	获取价格	ULTRA HIGH SPEED SWITCHING APPLICATION
1SS368	SEMTECH	获取价格	SILICON EPITAXIAL PLANAR DIODE
1SS368	TYSEMI	获取价格	Small Package Low forward voltage :Vf(3) = 0.98V(TYP.)
1SS369	TOSHIBA	获取价格	DIODE (LOW VOLTAGE HIGH SPEED SWITCHING)
1SS369	SEMTECH	获取价格	SILICON EPITAXIAL SCHOTTKY BARRIER DIODE
1SS369	TYSEMI	获取价格	Small Package Low forward voltage :Vf(3) = 0.54V(TYP.)
1SS369	KEXIN	获取价格	LOW VOLTAGE HIGH SPEED SWITCHING