Datasheet > 1SS372

1SS372

更新时间： 2024-11-14 07:23:47

品牌	Logo	应用领域
科信 - KEXIN		二极管开关
页数	文件大小	规格书
1页	48K
描述
HIGH SPEED SWITCHING DIODE

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

1SS372 数据手册

SMD Type

Diodes

Silicon Epitaxial Schottky Barrier Type

1SS372

Features

Small package

Low forward voltage : VF = 0.23V (typ.) @ IF=5mA

1 ANODE

3 CATHODE/ANOD

2 CATHODE

Absolute Maximum Ratings Ta = 25

Parameter

Maximum (Peak) reverse voltage

Reverse voltage

Symbol

Rating

Unit

VRM

Average forward current

Maximum (Peak) forward current

Surge current (10ms)

100 *

200 *

1 *

IFM

IFSM

Power dissipation

100

Junction temperature

125

Storage temperature

Tstg

Topr

-55 to +125

-40 to 100

Operating Temperature Range

*Unit Rating .Total Rating= Unit RatingX0.7

Electrical Characteristics Ta = 25

Parameter

Symbol

Testconditons

Min

Typ

Max

Unit

I^F= 1mA

I^F= 5mA

0.18

Forward voltage

V^F

0.23 0.30

0.35 0.50

I^F= 100mA

VR = 10V

Reverse current

I^R

ìA

Total capacitance

C^T

VR = 0, f = 1MHz

Marking

www.kexin.com.cn

中文翻译

下载PDF

与1SS372相关器件

型号	品牌	获取价格	描述	数据表
1SS372(T5LCK,F)	TOSHIBA	获取价格	Rectifier Diode, Schottky, 2 Element, 0.1A, 15V V(RRM), Silicon
1SS372_07	TOSHIBA	获取价格	High Speed Switching Application
1SS373	TOSHIBA	获取价格	DIODE (HIGH SPEED SWITCHING APPLICATION)
1SS373	TYSEMI	获取价格	Small Package Low forward voltage :VF = 0.23V(TYP.) IF = 5mA
1SS373	KEXIN	获取价格	HIGH SPEED SWITCHING APPLICATION
1SS373	SEMTECH	获取价格	SILICON EPITAXIAL SCHOTTKY BARRIER DIODE
1SS373WT	SEMTECH	获取价格	SILICON EPITAXIAL SCHOTTKY BARRIER DIODE
1SS374	KEXIN	获取价格	HIGH SPEED SWITCHING APPLICATION
1SS374	TYSEMI	获取价格	Small package Low forward voltage :VR =0.23V(Typ). IF = 5mA
1SS374	TOSHIBA	获取价格	DIODE (HIGH SPEED SWITCHING APPLICATION)