Datasheet > 1SS379

1SS379

更新时间： 2024-11-17 07:23:47

品牌	Logo	应用领域
科信 - KEXIN		二极管
页数	文件大小	规格书
1页	38K
描述
Silicon Epitaxial Planar Diode

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中文翻译

获取价格

数据手册

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1SS379 数据手册

SMD Type

Diodes

Silicon Epitaxial Planar Diode

1SS379

SOT-23

Unit: mm

+0.1

2.9

-0.1

+0.1

0.4

-0.1

Features

Low forward voltage :VF=1.0V(Typ.)

Low reverse current: IR=0.1nA(Typ.)

Small total capacitance: CT=3.0pF (Typ.)

+0.1

0.95

-0.1

+0.05

0.1

-0.01

+0.1

1.9

-0.1

1.Base

2.Emitter

3.collector

Absolute Maximum Ratings Ta = 25

Parameter

Maximum (peak) reverse voltage

Reverse voltage

Symbol

VRM

Rating

Unit

Average forward current *

Maximum (peak) forward current *

Surge current (10 ms) *

100

IFM

300

IFSM

Power dissipation

150

Junction Temperature

125

Storage Temperature

Tstg

-55 + 125

* Unit Rating. Total Rating=Unit Rating X0.7

Electrical Characteristics Ta = 25

Parameter

Forward voltage

Symbol

VF(1)

Test Conditions

IF = 100mA

Min

Typ

Max

1.3

Unit

1.0

0.1

3.0

Reverse current

VR = 80V

Total capacitance

VR = 0, f = 1.0 MHz

6.0

Marking

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