Datasheet > 1SS374_07

1SS374_07

更新时间： 2024-11-14 03:54:59

品牌	Logo	应用领域
东芝 - TOSHIBA		开关
页数	文件大小	规格书
3页	201K
描述
High Speed Switching Application

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中文翻译

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数据手册

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1SS374_07 数据手册

1SS374

TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type

1SS374

High Speed Switching Application

Unit: mm

z Small package

z Low forward voltage: V

= 0.23V (typ.) @I = 5mA

F (2)

Absolute Maximum Ratings (Ta = 25°C)

Characteristic

Symbol

Rating

Unit

Maximum (peak) reverse Voltage

Reverse voltage

Maximum (peak) forward current

Average forward current

Surge current (10ms)

200 *

100 *

1 *

FSM

Power dissipation

150

°C

Junction temperature

125

Storage temperature range

Operating temperature range

−55∼125

−40∼100

stg

opr

JEDEC

TO-236MOD

EIAJ

SC-59

1-3G1G

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

TOSHIBA

Weight: 0.012g

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are

within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

* Unit rating. Total rating = unit rating × 0.7

Electrical Characteristics (Ta = 25°C)

Test

Circuit

Characteristic

Symbol

Test Condition

= 1mA

Min

Typ.

Max

Unit

―

0.18

0.23

0.35

―

0.30

0.50

F (1)

F (2)

F (3)

Forward voltage

―

= 5mA

= 100mA

= 10V

―

Reverse current

―

μA

Total capacitance

―

= 0, f = 1MH

―

Marking

2007-11-01

12 3

中文翻译

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