Datasheet > 1SS375

1SS375

更新时间： 2024-11-18 12:53:35

品牌	Logo	应用领域
TYSEMI		二极管
页数	文件大小	规格书
1页	69K
描述
Small interterminal capacitance. Low forward voltage. High breakdown voltage.

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1SS375 数据手册

Product specification

1SS375

Features

Series connection of 2 elements in a very small-sized package facilitates high-density

mounting and permits 1SS375-applied equipment to be made smaller.

Small interterminal capacitance.

Low forward voltage.

High breakdown voltage.

Absolute Maximum Ratings Ta = 25

Parameter

Symbol

V^R

Value

Unit

Reverse Voltage

Forward Current

I^F

Junction Temperature

Storage temperature

T^j

125

Tstg

-55 to +125

Electrical Characteristics Ta = 25

Parameter

Symbol

V^F(1)

V^F(2)

I^F

Conditions

Min

350

480

Typ

Max

420

580

Unit

I^F= 1 mA

I^F= 10 mA

V^F= 1 V

Forward Voltage

Forward Current

Reverse Current

IR(1)

I^R(2)

V^R= 2 V

0.2

V^R= 10 V

Interterminal Capacitance

V^R= 0 V, f = 1 MHz

I^F= 10 mA

0.85

Forward Voltage Difference

Interterminal Capacitance Difference

V^R= 0 V, f = 1 MHz

0.1

Marking

1 of 1

http://www.twtysemi.com

sales@twtysemi.com

4008-318-123

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