Datasheet > 1SS374

1SS374

更新时间： 2024-11-15 14:55:51

品牌	Logo	应用领域
先科 - SWST		肖特基二极管
页数	文件大小	规格书
3页	166K
描述
肖特基二极管

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中文翻译

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数据手册

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1SS374 数据手册

1SS374

Surface Mount Schottky Barrier Diode

Features

• Low forward voltage

SOT-23 Plastic Package

1. Anode 2. Cathode 3. Cathode/ Anode

Absolute Maximum Ratings (T_a= 25℃)

Parameter

Symbol

V_RM

V_R

Value

Unit

Peak Reverse Voltage

Reverse Voltage

Average Rectified Forward Current

Peak Forward Surge Current (at tp ≤ 10 ms)

Power Dissipation

I_F(AV)

I_FSM

P_tot

100

150

℃

Junction Temperature

T_j

125

Storage Temperature Range

T_stg

- 55 to + 150

℃

Thermal Characteristics

Parameter

Symbol

R_θJA

Value

667

Unit

Typical Thermal Resistance - Junction to Ambient ¹⁾

¹⁾Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.

℃/W

Characteristics at T_a= 25℃

Parameter

Symbol

V_(BR)R

Min.

Typ.

Max.

Unit

Reverse Breakdown Voltage

at I_R= 100 μA

Forward Voltage

at I_F= 1 mA

at I_F= 5 mA

0.18

V_F

I_R

0.3

0.5

at I_F= 100 mA

Reverse Current

at V_R= 10 V

μA

1 / 3

Dated: 26/06/2023 Rev : 01

12 3

中文翻译

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