Datasheet > 1SS367,H3F(B

1SS367,H3F(B

更新时间： 2024-11-20 20:10:27

品牌	Logo	应用领域
东芝 - TOSHIBA		二极管
页数	文件大小	规格书
3页	218K
描述
Rectifier Diode

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中文翻译

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技术参数
数据手册

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1SS367,H3F(B 技术参数

生命周期：	Active	Reach Compliance Code：	unknown
风险等级：	5.7	二极管类型：	RECTIFIER DIODE
Base Number Matches：	1

1SS367,H3F(B 数据手册

1SS367

TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type

1SS367

High Speed Switching Application

Unit: mm

z Small package

z Low forward voltage: V = 0.23V (typ.) @I = 5mA

Absolute Maximum Ratings (Ta = 25°C)

Characteristic

Symbol

Rating

Unit

Maximum (peak) reverse voltage

Reverse voltage

Maximum (peak) forward current

Average forward current

Surge current (10ms)

200

100

FSM

Power dissipation

P *

200

°C

Junction temperature

125

Storage temperature

−55 to 125

−40 to 100

stg

opr

Operating temperature range

JEDEC

―

JEITA

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

TOSHIBA

1-1E1A

Weight: 0.004g (typ.)

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are

within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Mounted on a glass epoxy circuit board of 20 × 20 mm

Pad dimension of 4 × 4 mm.

Electrical Characteristics (Ta = 25°C)

Test

Circuit

Characteristic

Symbol

Test Condition

= 1mA

Min

Typ.

Max

Unit

―

0.18

0.23

0.35

―

0.30

0.50

F (1)

F (2)

F (3)

Forward voltage

= 5mA

= 100mA

Reverse current

= 10V

μA

Total capacitance

= 0, f = 1MHz

Equivalent Circuit (Top View)

Marking

Start of commercial production

1993-04

2014-03-01

12 3

中文翻译

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