Datasheet > 1SS372

1SS372

更新时间： 2024-11-18 03:54:59

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		肖特基二极管
页数	文件大小	规格书
2页	112K
描述
Schottky Barrier Diode

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中文翻译

获取价格

数据手册

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1SS372 数据手册

BL Galaxy Electrical

Production specification

Schottky Barrier Diode

1SS372

FEATURES

Lead-free

Small surface mounting type.

Small package.

Low forward voltage:V_F=0.23V(typ).

APPLICATIONS

For general purpose applications.

SOT-323

ORDERING INFORMATION

Type No.

1SS372

Marking

Package Code

SOT-323

MAXIMUM RATING @ Ta=25℃ unless otherwise specified

Parameter

Symbol

V_RM

V_R

Limits

Unit

Non-Repetitive Peak reverse voltage

Diode reverse voltage

Forward continuous Current

Forward Surge Current (10ms)

Power Dissipation

I_F

200

I_FSM

P_d

100

℃

Junction temperature

T_j

125

Storage temperature range

T_stg

-55-+125

℃

ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified

Parameter

Symbol

Test conditions

MIN

Typ.

MAX

UNIT

Reverse current

I_R

V_R=10V

μA

I_F=1mA

I_F=5mA

0.18

0.3

Forward voltage

V_F

I_F=100mA

0.5

Diode capacitance

C_D

V_R=0V, f=1MHz

Document number: BL/SSSKF013

Rev.A

www.galaxycn.com

中文翻译

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