Datasheet > 1SS372

1SS372

更新时间： 2024-10-30 03:54:59

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		肖特基二极管
页数	文件大小	规格书
2页	112K
描述
Schottky Barrier Diode

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

1SS372 数据手册

BL Galaxy Electrical

Production specification

Schottky Barrier Diode

1SS372

FEATURES

Lead-free

Small surface mounting type.

Small package.

Low forward voltage:V_F=0.23V(typ).

APPLICATIONS

For general purpose applications.

SOT-323

ORDERING INFORMATION

Type No.

1SS372

Marking

Package Code

SOT-323

MAXIMUM RATING @ Ta=25℃ unless otherwise specified

Parameter

Symbol

V_RM

V_R

Limits

Unit

Non-Repetitive Peak reverse voltage

Diode reverse voltage

Forward continuous Current

Forward Surge Current (10ms)

Power Dissipation

I_F

200

I_FSM

P_d

100

℃

Junction temperature

T_j

125

Storage temperature range

T_stg

-55-+125

℃

ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified

Parameter

Symbol

Test conditions

MIN

Typ.

MAX

UNIT

Reverse current

I_R

V_R=10V

μA

I_F=1mA

I_F=5mA

0.18

0.3

Forward voltage

V_F

I_F=100mA

0.5

Diode capacitance

C_D

V_R=0V, f=1MHz

Document number: BL/SSSKF013

Rev.A

www.galaxycn.com

中文翻译

下载PDF

与1SS372相关器件

型号	品牌	获取价格	描述	数据表
1SS372(T5LCK,F)	TOSHIBA	获取价格	Rectifier Diode, Schottky, 2 Element, 0.1A, 15V V(RRM), Silicon
1SS372_07	TOSHIBA	获取价格	High Speed Switching Application
1SS373	TOSHIBA	获取价格	DIODE (HIGH SPEED SWITCHING APPLICATION)
1SS373	TYSEMI	获取价格	Small Package Low forward voltage :VF = 0.23V(TYP.) IF = 5mA
1SS373	KEXIN	获取价格	HIGH SPEED SWITCHING APPLICATION
1SS373	SEMTECH	获取价格	SILICON EPITAXIAL SCHOTTKY BARRIER DIODE
1SS373WT	SEMTECH	获取价格	SILICON EPITAXIAL SCHOTTKY BARRIER DIODE
1SS374	KEXIN	获取价格	HIGH SPEED SWITCHING APPLICATION
1SS374	TYSEMI	获取价格	Small package Low forward voltage :VR =0.23V(Typ). IF = 5mA
1SS374	TOSHIBA	获取价格	DIODE (HIGH SPEED SWITCHING APPLICATION)