Datasheet > 1SS370_07

1SS370_07

更新时间： 2024-11-14 03:54:59

品牌	Logo	应用领域
东芝 - TOSHIBA		开关高压
页数	文件大小	规格书
3页	208K
描述
High Voltage, High Speed Switching Applications

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数据手册

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1SS370_07 数据手册

1SS370

TOSHIBA Diode Silicon Epitaxial Planar Type

1SS370

High Voltage, High Speed Switching Applications

Unit: mm

z Low forward voltage

: V

= 0.9V (typ.)

F (2)

z Fast reverse recovery time: t = 60ns (typ.)

z Small total capacitance

z Small package

: C = 1.5pF (typ.)

: SC-70

Absolute Maximum Ratings (Ta = 25°C)

Characteristic

Symbol

Rating

Unit

Maximum (peak) reverse voltage

Reverse voltage

250

200

Maximum (peak) forward current

Average forward current

Surge current (10ms)

300

100

FSM

JEDEC

―

Power dissipation

100

°C

EIAJ

SC−70

Junction temperature

125

1-2P1D

TOSHIBA

Weight: 0.006g

Storage temperature range

−55∼125

stg

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Electrical Characteristics (Ta = 25°C)

Test

Circuit

Characteristic

Symbol

Test Condition

= 10mA

Min

Typ.

Max

Unit

―

0.72

0.90

―

1.0

1.2

0.1

1.0

3.0

F (1)

F (2)

R (1)

R (2)

Forward voltage

―

= 100mA

= 50V

Reverse current

μA

= 200V

―

Total capacitance

= 0, f = 1MH

1.5

Reverse recovery time

I = 10mA, Fig.1

2007-11-01

12 3

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