Datasheet > 1SS372

1SS372

更新时间： 2024-11-14 07:07:59

品牌	Logo	应用领域
金誉半导体 - HTSEMI		二极管
页数	文件大小	规格书
1页	238K
描述
SCHOTTK Y B AR RIER DIODE

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中文翻译

获取价格

数据手册

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1SS372 数据手册

S1S372

SCHOTTKY BARRIER DIODE

SOT-323

FEATURES

 Small Package

 Low Forward Voltage

APPLICATIONS

 High Speed Switching

MARKING: N9

MAXIMUM RATINGS ( T_a=25℃ unless otherwise noted )

Symbol

Parameter

Value

Unit

DC Blocking Voltage

V_R

Forward Continuous Current

Peak Forward Current

100

I_O

200

I_FM

Surge Current@10ms

I_FSM

P_D

Power Dissipation

100

℃/W

℃

Thermal Resistance From Junction To Ambient

Junction Temperature

1000

125

R_θJA

T_j

Storage Temperature

-55~+150

T_stg

℃

ELECTRICAL CHARACTERISTICS(T_a=25℃ unless otherwise specified)

Parameter

Reverse voltage

Reverse current

Symbol

V_(BR)

I_R

Test conditions

Min

Typ

Max

Unit

I_R=100μA

V_R=10V

I_F=1mA

μA

0.18

0.3

V_F

Forward voltage

Total capacitance

I_F=5mA

I_F=100mA

0.5

C_tot

V_R=0V,f=1MHz

JinYu

semiconductor

www.htsemi.com

Date:2011/05

中文翻译

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