Datasheet > 1SS370W

1SS370W

更新时间： 2024-11-14 07:23:47

品牌	Logo	应用领域
商升特 - SEMTECH		二极管
页数	文件大小	规格书
2页	175K
描述
Silicon Epitaxial Planar Diode

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1SS370W 数据手册

1SS370W

Silicon Epitaxial Planar Diode

For high voltage and high speed switching applications

Marking Code: F5

Absolute Maximum Ratings (T_a= 25 C)

Parameter

Maximum Peak Reverse Voltage

Reverse Voltage

Symbol

V_RM

V_R

Value

250

200

100

300

Unit

Average Forward Current

Maximum Peak Forward Current

Surge Forward Current (10 ms)

Power Dissipation

I_F

I_FM

I_FSM

P_D

100

125

Junction Temperature

T_j

Storage Temperature Range

T_stg

- 55 to + 125

Characteristics at T_a= 25 C

Parameter

Symbol

Max.

Unit

Forward Voltage

at I_F= 10 mA

at I_F= 100 mA

V_F

1.2

Reverse Current

at V_R= 50 V

I_R

0.1

µA

at V_R= 200 V

Total Capacitance

at V_R= 0, f = 1 MHz

Reverse Recovery Time

at I_F= 10 mA

C_T

t_rr

SEMTECH ELECTRONICS LTD.

(Subsidiary of Sino-Tech International Holdings Limited, a company

listed on the Hong Kong Stock Exchange, Stock Code: 724)

Dated : 02/07/2006

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