Datasheet > 1SS372

1SS372

更新时间： 2024-11-15 14:55:23

品牌	Logo	应用领域
江苏长电/长晶 - CJ		二极管
页数	文件大小	规格书
4页	1591K
描述
SOT-323

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

1SS372 技术参数

生命周期：	Contact Manufacturer	Reach Compliance Code：	unknown
ECCN代码：	EAR99	风险等级：	5.82

1SS372 数据手册

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD

SOT-323 Plastic-Encapsulate Diodes

1SS372

SCHOTTKY BARRIER DIODE

SOT-323

FEATURES

 Small Package

 Low Forward Voltage

APPLICATIONS

 High Speed Switching

MARKING: N9

Solid dot = Green molding compound device.

MAXIMUM RATINGS ( T_a=25℃ unless otherwise noted )

Symbol

Parameter

Value

Unit

DC Blocking Voltage

V_R

Forward Continuous Current

100

200

I_O

Peak Forward Current

I_FM

Non-respetitive Peak Forward Surge Current@t=8.3ms

Power Dissipation

I_FSM

P_D

100

1000

℃/W

℃

Thermal Resistance From Junction To Ambient

Operating Junction Temperature Range

Storage Temperature Range

R_θJA

T_j

-40 ~ +125

-55 ~ +150

T_stg

℃

ELECTRICAL CHARACTERISTICS(T_a=25℃ unless otherwise specified)

Parameter

Reverse voltage

Reverse current

Symbol

V_(BR)

I_R

Test conditions

Min

Typ

Max

Unit

I_R=100μA

V_R=10V

I_F=1mA

μA

0.18

0.3

V_F

Forward voltage

Total capacitance

I_F=5mA

I_F=100mA

0.5

C_tot

V_R=0V,f=1MHz

www.jscj-elec.com

Rev. - 2.1

12 3 4

中文翻译

下载PDF

与1SS372相关器件

型号	品牌	获取价格	描述	数据表
1SS372(T5LCK,F)	TOSHIBA	获取价格	Rectifier Diode, Schottky, 2 Element, 0.1A, 15V V(RRM), Silicon
1SS372_07	TOSHIBA	获取价格	High Speed Switching Application
1SS373	TOSHIBA	获取价格	DIODE (HIGH SPEED SWITCHING APPLICATION)
1SS373	TYSEMI	获取价格	Small Package Low forward voltage :VF = 0.23V(TYP.) IF = 5mA
1SS373	KEXIN	获取价格	HIGH SPEED SWITCHING APPLICATION
1SS373	SEMTECH	获取价格	SILICON EPITAXIAL SCHOTTKY BARRIER DIODE
1SS373WT	SEMTECH	获取价格	SILICON EPITAXIAL SCHOTTKY BARRIER DIODE
1SS374	KEXIN	获取价格	HIGH SPEED SWITCHING APPLICATION
1SS374	TYSEMI	获取价格	Small package Low forward voltage :VR =0.23V(Typ). IF = 5mA
1SS374	TOSHIBA	获取价格	DIODE (HIGH SPEED SWITCHING APPLICATION)