生命周期: | Not Recommended | 包装说明: | R-PDSO-G2 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
HTS代码: | 8541.10.00.60 | 风险等级: | 5.71 |
最小击穿电压: | 30 V | 配置: | SINGLE |
最大二极管电容: | 1.2 pF | 二极管元件材料: | SILICON |
二极管类型: | MIXER DIODE | 最大正向电压 (VF): | 0.85 V |
频带: | VERY HIGH FREQUENCY | JESD-30 代码: | R-PDSO-G2 |
元件数量: | 1 | 端子数量: | 2 |
最高工作温度: | 125 °C | 最大输出电流: | 100 A |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 认证状态: | Not Qualified |
最大反向电流: | 0.1 µA | 表面贴装: | YES |
端子形式: | GULL WING | 端子位置: | DUAL |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
1SS314WT | SEMTECH |
获取价格 |
SILICON EPITAXIAL PLANAR DIODE | |
1SS314WT | SWST |
获取价格 |
波段开关管 | |
1SS315 | TYSEMI |
获取价格 |
Maximum (Peak) Reverse Voltage VRM 5 V Forward Current IF 30 mA | |
1SS315 | KEXIN |
获取价格 |
UHF BAND MIXER APPLICATIONS | |
1SS315 | SEMTECH |
获取价格 |
SILICON EPITAXIAL SCHOTTKY BARRIER DIODE | |
1SS315 | TOSHIBA |
获取价格 |
DIODE (UHF BAND MIXER APPLICATIONS) | |
1SS315(TPH3,F) | TOSHIBA |
获取价格 |
MIXER DIODE,UMD2VAR | |
1SS315(TPH3F) | TOSHIBA |
获取价格 |
Mixer Diode | |
1SS315_07 | TOSHIBA |
获取价格 |
UHF Band Mixer Applications | |
1SS315TPH2 | TOSHIBA |
获取价格 |
DIODE SILICON, UHF BAND, MIXER DIODE, Microwave Mixer Diode |