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1SS314WT

更新时间: 2024-11-17 05:57:39
品牌 Logo 应用领域
商升特 - SEMTECH 二极管局域网
页数 文件大小 规格书
1页 130K
描述
SILICON EPITAXIAL PLANAR DIODE

1SS314WT 数据手册

  
ST 2SB772T  
PNP SILICON EPITAXIAL POWER TRANSISTOR  
These devices are intended for use in audio  
frequency power amplifier and low speed switching  
applications  
E
C
B
TO-126 Plastic Package  
O
Absolute Maximum Ratings (Ta = 25 C)  
Parameter  
Collector Base Voltage  
Symbol  
-VCBO  
-VCEO  
-VEBO  
Value  
40  
Unit  
V
Collector Emitter Voltage  
Emitter Base Voltage  
30  
V
5
V
Collector Current - DC  
Collector Current - Pulse 1)  
-IC  
-IC  
3
7
A
A
Base Current - DC  
-IB  
0.6  
A
O
PD  
PD  
10  
1.0  
W
W
Total Power Dissipation @ TC = 25 C  
O
Total Power Dissipation @ TA = 25 C  
O
C
Operating and Storage Junction Temperature Range  
TJ, Ts  
- 65 to + 150  
1) PW=10ms, Duty Cycle 50%  
O
Characteristics at Ta = 25 C  
Parameter  
Symbol  
hFE  
hFE  
hFE  
hFE  
hFE  
Min.  
Typ.  
Max.  
Unit  
DC Current Gain  
at -VCE = 2 V, -IC = 20 mA  
at -VCE = 2 V, -IC = 1 A  
30  
60  
100  
160  
200  
-
-
-
-
-
-
-
-
-
-
-
R
Q
P
E
120  
200  
320  
400  
Collector Emitter Breakdown Voltage  
at -IC = 1 mA  
-V(BR)CEO  
-V(BR)CBO  
-V(BR)EBO  
-ICBO  
30  
40  
5
-
-
-
-
-
-
-
V
V
Collector Base Breakdown Voltage  
at -IC = 1 mA  
Emitter Base Breakdown Voltage  
at -IE = 1 mA  
-
V
Collector Cutoff Current  
at -VCB = 30 V  
-
1
1
µA  
µA  
Emitter Cutoff Current  
at -VEB = 3 V  
-IEBO  
-
Collector Emitter Saturation Voltage  
at -IC = 2 A, -IB = 200 mA  
-VCE(sat)  
-VBE(sat)  
CO  
-
-
-
-
-
0.5  
2
V
V
Base Emitter Saturation Voltage  
at -IC = 2 A, -IB = 200 mA  
Output Capacitance  
55  
-
pF  
at -VCB = 10 V, f = 1 MHz  
Current Gain Bandwidth Product  
at -IC = 100 mA, -VCE = 5 V  
fT  
-
80  
-
MHz  
SEMTECH ELECTRONICS LTD.  
(Subsidiary of Sino-Tech International Holdings Limited, a company  
listed on the Hong Kong Stock Exchange, Stock Code: 724)  
®
Dated : 25/05/2006  

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