Datasheet > 1SS315

1SS315

更新时间： 2024-11-17 05:56:15

品牌	Logo	应用领域
商升特 - SEMTECH		肖特基二极管光电二极管 PC
页数	文件大小	规格书
3页	172K
描述
SILICON EPITAXIAL SCHOTTKY BARRIER DIODE

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1SS315 数据手册

1SS315

SILICON EPITAXIAL SCHOTTKY BARRIER DIODE

Applications

• UHF Band Mixer

PINNING

DESCRIPTION

Cathode

Anode

Top View

Marking Code: "ST"

Simplified outline SOD-323 and symbol

Absolute Maximum Ratings (T_a= 25 C)

Parameter

Symbol

V_RM

I_F

Value

Unit

Peak Reverse Voltage

Forward Current

Junction Temperature

T_J

125

Storage Temperature Range

T_stg

- 55 to + 125

Electrical Characteristics at T_a= 25 C

Parameter

Symbol

I_F

Min.

Typ.

Max.

Unit

Forward Current

at V_F= 0.5 V

µA

Reverse Current

at V_R= 0.5 V

I_R

Total Capacitance

C_T

0.6

at V_R= 0.2 V, f = 1 MHz

SEMTECH ELECTRONICS LTD.

(Subsidiary of Sino-Tech International Holdings Limited, a company

listed on the Hong Kong Stock Exchange, Stock Code: 724)

Dated : 01/09/2006

12 3

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