Datasheet > 1SS321_07

1SS321_07

更新时间： 2024-11-11 03:54:59

品牌	Logo	应用领域
东芝 - TOSHIBA		二极管
页数	文件大小	规格书
3页	175K
描述
TOSHIBA Diode Silicon Epitaxial Planar Type

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1SS321_07 数据手册

1SS321

TOSHIBA Diode Silicon Epitaxial Planar Type

1SS321

Unit: mm

Low Voltage High Speed Switching

z Low forward voltage

z Low reverse current

z Small package

: V = 0.42V (typ.)

: I = 500nA (max)

: SC-59 (SOT-23MOD)

Absolute Maximum Ratings (Ta = 25°C)

Characteristic

Symbol

Rating

Unit

Maximum (peak) reverse voltage

Reverse voltage

Maximum (peak) forward current

Average forward current

Surge current (10ms)

Power dissipation

150 (*)

50 (*)

1000 (*)

150

°C

FSM

JEDEC

SOT−23MOD

Junction temperature

125

EIAJ

SC−59

Storage temperature

stg

−55∼125

°C

1−3G1F

TOSHIBA

Weight: 0.012g

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating

conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

(*) Unit rating. Total rating = unit rating × 1.5.

Electrical Characteristics (Ta = 25°C)

Test

Circuit

Characteristic

Symbol

Test Condition

= 1mA

Min

Typ.

Max

Unit

0.32

0.42

0.63

―

F (1)

Forward voltage

= 10mA

= 50mA

―

F (2)

1.00

―

F (3)

Reverse current

= 10V

―

500

4.5

―

Total capacitance

= 0, f = 1MHz

3.2

―

Marking

2007-11-01

12 3

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