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1SS315_07 PDF预览

1SS315_07

更新时间: 2024-11-17 03:54:59
品牌 Logo 应用领域
东芝 - TOSHIBA /
页数 文件大小 规格书
3页 207K
描述
UHF Band Mixer Applications

1SS315_07 数据手册

 浏览型号1SS315_07的Datasheet PDF文件第2页浏览型号1SS315_07的Datasheet PDF文件第3页 
1SS315  
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type  
1SS315  
UHF Band Mixer Applications  
Unit: mm  
Absolute Maximum Ratings (Ta = 25°C)  
Characteristics  
Symbol  
Rating  
Unit  
Maximum (peak) reverse voltage  
Forward current  
V
5
30  
V
RM  
I
mA  
°C  
°C  
F
Junction temperature  
T
125  
j
Storage temperature range  
T
55~125  
stg  
Note: Using continuously under heavy loads (e.g. the application of high  
temperature/current/voltage and the significant change in  
temperature, etc.) may cause this product to decrease in the  
reliability significantly even if the operating conditions (i.e.  
operating temperature/current/voltage, etc.) are within the  
absolute maximum ratings.  
JEDEC  
JEITA  
Please design the appropriate reliability upon reviewing the  
Toshiba Semiconductor Reliability Handbook (“Handling  
Precautions”/“Derating Concept and Methods”) and individual  
reliability data (i.e. reliability test report and estimated failure rate,  
etc).  
TOSHIBA  
1-1E1A  
Weight: 0.004 g (typ.)  
Electrical Characteristics (Ta = 25°C)  
Characteristics  
Forward voltage  
Symbol  
Test Condition  
Min  
Typ.  
Max  
Unit  
V
I
= 2 mA  
F
30  
0.25  
25  
V
F
Forward current  
Reverse current  
Total capacitance  
I
V
V
V
= 0.5 V  
= 0.5 V  
mA  
μA  
pF  
F
F
I
R
R
R
C
= 0.2 V, f = 1 MHz  
0.6  
T
Marking  
1
2007-11-01  

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