Datasheet > 1SS321

1SS321

更新时间： 2024-11-11 05:56:27

品牌	Logo	应用领域
商升特 - SEMTECH		肖特基二极管光电二极管
页数	文件大小	规格书
2页	130K
描述
SILICON EPITAXIAL SCHOTTKY BARRIER DIODE

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中文翻译

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数据手册

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1SS321 数据手册

1SS321

SILICON EPITAXIAL SCHOTTKY BARRIER DIODE

For low voltage high speed switching application

Features

• Low forward voltage

• Low reverse current

Marking Code: "ZC"

SOT-23 Plastic Package

Absolute Maximum Ratings (T_a= 25 C)

Parameter

Maximum Peak Reverse Voltage

Reverse Voltage

Symbol

V_RM

V_R

Value

Unit

Average Forward Current

I_O

Maximum Peak Forward Current

Non-Repetitive Peak Forward Surge Current ( t = 10 ms)

Power Dissipation

150

I_FM

150

I_FSM

P_d

Junction Temperature

125

T_j

Storage Temperature Range

- 55 to + 125

T_stg

Characteristics at T_a= 25 C

Parameter

Symbol

V_F

Min.

Max.

Unit

Forward Voltage

at I_F= 50 mA

Reverse Current

at V_R= 10 V

I_R

500

Reverse Breakdown Voltage

at I_R= 10 µA

V_(BR)R

C_T

Total Capacitance

at V_R= 0 , f = 1 MHz

4.5

SEMTECH ELECTRONICS LTD.

(Subsidiary of Sino-Tech International Holdings Limited, a company

listed on the Hong Kong Stock Exchange, Stock Code: 724)

Dated : 04/12/2007

中文翻译

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