Datasheet > 1SS315TPHR4

1SS315TPHR4

更新时间： 2024-02-15 14:14:01

品牌	Logo	应用领域
东芝 - TOSHIBA		光电二极管
页数	文件大小	规格书
3页	120K
描述
DIODE SILICON, UHF BAND, MIXER DIODE, Microwave Mixer Diode

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技术参数
数据手册

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1SS315TPHR4 技术参数

生命周期：	Not Recommended	包装说明：	R-PDSO-G2
Reach Compliance Code：	unknown	ECCN代码：	EAR99
HTS代码：	8541.10.00.60	风险等级：	5.7
配置：	SINGLE	二极管元件材料：	SILICON
二极管类型：	MIXER DIODE	频带：	ULTRA HIGH FREQUENCY
JESD-30 代码：	R-PDSO-G2	元件数量：	1
端子数量：	2	最高工作温度：	125 °C
最大输出电流：	30 A	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	SMALL OUTLINE
认证状态：	Not Qualified	最大反向电流：	25 µA
表面贴装：	YES	技术：	SCHOTTKY
端子形式：	GULL WING	端子位置：	DUAL
Base Number Matches：	1

1SS315TPHR4 数据手册

1SS315

TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type

1SS315

UHF Band Mixer Applications

Unit: mm

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Symbol

Rating

Unit

Maximum (peak) reverse voltage

Forward current

°C

Junction temperature

125

Storage temperature range

−55~125

stg

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the

absolute maximum ratings.

JEDEC

JEITA

―

Please design the appropriate reliability upon reviewing the

Toshiba Semiconductor Reliability Handbook (“Handling

Precautions”/“Derating Concept and Methods”) and individual

reliability data (i.e. reliability test report and estimated failure rate,

etc).

TOSHIBA

1-1E1A

Weight: 0.004 g (typ.)

Electrical Characteristics (Ta = 25°C)

Characteristics

Forward voltage

Symbol

Test Condition

Min

Typ.

Max

Unit

= 2 mA

⎯

0.25

⎯

Forward current

Reverse current

Total capacitance

= 0.5 V

μA

⎯

= 0.2 V, f = 1 MHz

0.6

Marking

2007-11-01

12 3

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