1SS321TE85R

更新时间： 2024-11-11 12:58:03

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东芝 - TOSHIBA		开关
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中文翻译

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数据手册

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1SS321TE85R 数据手册

1SS321

TOSHIBA Diode Silicon Epitaxial Planar Type

1SS321

Unit: mm

Low-Voltage High-Speed Switching

z Low forward voltage: V = 0.42 V (typ.)

z Low reverse current: I = 500 nA (max)

z Small package: SC-59

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Symbol

Rating

Unit

Maximum (peak) reverse voltage

Reverse voltage

Maximum (peak) forward current

Average forward current

Surge current (10 ms)

Power dissipation

150*

50*

°C

1000*

150

FSM

JEDEC

TO−236MOD

Junction temperature

125

JEITA

SC−59

Storage temperature

stg

−55 to 125

°C

1−3G1F

TOSHIBA

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

Weight: 0.012 g (typ.)

temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating

conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Unit rating. Total rating = unit rating × 1.5.

Electrical Characteristics (Ta = 25°C)

Test

Circuit

Characteristics

Symbol

Test Condition

= 1 mA

Min

Typ.

Max

Unit

0.32

0.42

0.63

―

F (1)

Forward voltage

= 10 mA

= 50 mA

F (2)

1.00

F (3)

Reverse current

= 10 V

―

500

4.5

―

Total capacitance

= 0, f = 1 MHz

3.2

Marking

2008-11-11

12 3

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