1SS319(F) PDF预览

1SS319(F)

更新时间: 2025-02-11 07:43:27
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东芝 - TOSHIBA /
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描述
Rectifier Diode

1SS319(F) 数据手册

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1SS319  
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type  
1SS319  
Low Voltage High Speed Switching  
Unit: mm  
Small package  
: SC-61  
: V (3) = 0.54V (typ.)  
Low forward voltage  
Low reverse current  
F
: I = 5μA (max)  
R
Absolute Maximum Ratings (Ta = 25°C)  
Characteristic  
Symbol  
Rating  
Unit  
Maximum (peak) reverse voltage  
Reverse voltage  
V
45  
40  
V
V
RM  
V
R
Maximum (peak) forward current  
Average forward current  
Power dissipation  
I
300 (*)  
100 (*)  
150 (*)  
125  
mA  
mA  
mW  
°C  
FM  
I
O
P
Junction temperature  
T
j
Storage temperature  
T
55 to 125  
°C  
stg  
SMQ  
JEDEC  
JEITA  
Note: Using continuously under heavy loads (e.g. the application of high  
temperature/current/voltage and the significant change in  
temperature, etc.) may cause this product to decrease in the  
reliability significantly even if the operating conditions (i.e. operating  
temperature/current/voltage, etc.) are within the absolute maximum  
ratings.  
SC61  
TOSHIBA  
23J1A  
Weight: 0.013 g (typ.)  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
(*): Unit rating. Total rating = unit rating × 1.5.  
Electrical Characteristics (Ta = 25°C)  
Characteristic  
Symbol  
Test Condition  
= 1mA  
Min  
Typ.  
Max  
Unit  
V
V
V
V
I
I
I
0.28  
0.36  
0.54  
F (1)  
F (2)  
F (3)  
F
F
F
Forward voltage  
= 10mA  
= 100mA  
0.60  
5
Reverse current  
I
V
V
= 40V  
R
R
R
μA  
Total capacitance  
C
T
= 0, f = 1MHz  
18  
25  
pF  
Marking  
Start of commercial production  
1987-06  
1
2015-01-15  

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