生命周期: | Transferred | Reach Compliance Code: | unknown |
风险等级: | 5.74 | 应用: | GENERAL PURPOSE |
外壳连接: | ISOLATED | 配置: | SINGLE |
二极管元件材料: | SILICON | 二极管类型: | RECTIFIER DIODE |
JESD-30 代码: | O-LALF-W2 | JESD-609代码: | e0 |
元件数量: | 1 | 相数: | 1 |
端子数量: | 2 | 最大输出电流: | 5 A |
封装主体材料: | GLASS | 封装形状: | ROUND |
封装形式: | LONG FORM | 认证状态: | Not Qualified |
表面贴装: | NO | 技术: | SCHOTTKY |
端子面层: | TIN LEAD | 端子形式: | WIRE |
端子位置: | AXIAL | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
1N6702-1 | MICROSEMI |
获取价格 |
Rectifier Diode, Schottky, 1 Element, 5A, 40V V(RRM), | |
1N6702US | CDI-DIODE |
获取价格 |
Rectifier Diode, Schottky, 1 Phase, 1 Element, 5A, Silicon, | |
1N6702USE3 | MICROSEMI |
获取价格 |
Rectifier Diode, Schottky, 1 Phase, 1 Element, 5A, Silicon, HERMETIC SEALED, GLASS, D-5C, | |
1N6703 | MICROSEMI |
获取价格 |
Rectifier Diode, 1 Phase, 20A, Silicon, G-STRAP-1 | |
1N6703E3 | MICROSEMI |
获取价格 |
Rectifier Diode, 1 Phase, 20A, Silicon, G-STRAP-1 | |
1N6704 | MICROSEMI |
获取价格 |
Rectifier Diode, 1 Phase, 1 Element, 20A, 200V V(RRM), Silicon, DO-217AA, HERMETIC SEALED, | |
1N6704R | MICROSEMI |
获取价格 |
Rectifier Diode, 1 Phase, 1 Element, 20A, 200V V(RRM), Silicon, DO-217AA, HERMETIC SEALED, | |
1N6705 | MICROSEMI |
获取价格 |
ULTRAFAST RECTIFIER | |
1N6705R | MICROSEMI |
获取价格 |
ULTRAFAST RECTIFIER | |
1N6706 | MICROSEMI |
获取价格 |
Rectifier Diode, 1 Phase, 20A, Silicon, G-STRAP-1 |