生命周期: | Obsolete | 包装说明: | G-STRAP-1 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
HTS代码: | 8541.10.00.80 | 风险等级: | 5.84 |
应用: | ULTRA FAST RECOVERY | 二极管元件材料: | SILICON |
二极管类型: | RECTIFIER DIODE | JESD-30 代码: | O-XXSO-G1 |
最大非重复峰值正向电流: | 150 A | 相数: | 1 |
端子数量: | 1 | 最大输出电流: | 20 A |
封装主体材料: | UNSPECIFIED | 封装形状: | ROUND |
封装形式: | SMALL OUTLINE | 最大反向恢复时间: | 0.035 µs |
表面贴装: | YES | 端子形式: | GULL WING |
端子位置: | UNSPECIFIED | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
1N6710 | MICROSEMI |
获取价格 |
Rectifier Diode, 1 Phase, 50A, Silicon, | |
1N6710E3 | MICROSEMI |
获取价格 |
Rectifier Diode, 1 Phase, 50A, Silicon, | |
1N6710G | MICROSEMI |
获取价格 |
Rectifier Diode, 1 Phase, 50A, Silicon, X-STRAP | |
1N6710GE3 | MICROSEMI |
获取价格 |
Rectifier Diode, 1 Phase, 50A, Silicon, X-STRAP | |
1N6710GR | MICROSEMI |
获取价格 |
Rectifier Diode, 1 Phase, 50A, Silicon, X-STRAP | |
1N6711 | MICROSEMI |
获取价格 |
Rectifier Diode, 1 Phase, 50A, Silicon, | |
1N6711B | MICROSEMI |
获取价格 |
Rectifier Diode, 1 Phase, 1 Element, 50A, 200V V(RRM), Silicon, DO-217AA, SLUGGER PACKAGE- | |
1N6711G | MICROSEMI |
获取价格 |
Rectifier Diode, 1 Phase, 50A, Silicon, X-STRAP | |
1N6711GE3 | MICROSEMI |
获取价格 |
Rectifier Diode, 1 Phase, 50A, Silicon, X-STRAP | |
1N6711GR | MICROSEMI |
获取价格 |
Rectifier Diode, 1 Phase, 50A, Silicon, X-STRAP |