1N6705

更新时间： 2024-11-05 22:40:59

品牌	Logo	应用领域
美高森美 - MICROSEMI		/
页数	文件大小	规格书
2页	52K
描述
ULTRAFAST RECTIFIER

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中文翻译

获取价格

数据手册

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1N6705 数据手册

2830 S. Fairview St.

Santa Ana, CA 92704

PH: (714) 979-8220

FAX: (714) 966-5256

1N6705

1N6705R

Features

passivated mesa structure for very low leakage currents

Epitaxial structure minimizes forward voltage drop

Hermetically sealed surface mount power package

400 Volts

20 Amps

PRELIMINARY

Low package inductance

35 ns

Very low thermal resistance

Available as standard polarity (strap-to-anode, 1N6705) and reverse

polarity (strap-to-cathode: 1N6705R)

ULTRAFAST

RECTIFIER

Maximum Ratings @ 25°C (unless otherwise specified)

DESCRIPTION

SYMBOL

MAX.

UNIT

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

Average Rectified Forward Current, Tc£ 125°C

Nonrepetitive Peak Surge Current, tp= 8.3 ms, half-sinewave

Junction Temperature Range

Storage Temperature Range

Thermal Resistance, Junction to Case:

V_RRM

V_RWM

V_R

I_F(ave)

I_FSM

T_j

400

100

Volts

Amps

°C

-65 to +175

2.0 (typ. 1.6)

T_stg

°C

°C/W

q_JC

Mechanical Outline

G-BODY (DO-217AA)

Datasheet# MSC0862

中文翻译

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