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1N6711B PDF预览

1N6711B

更新时间: 2024-11-06 21:12:39
品牌 Logo 应用领域
美高森美 - MICROSEMI 二极管
页数 文件大小 规格书
2页 64K
描述
Rectifier Diode, 1 Phase, 1 Element, 50A, 200V V(RRM), Silicon, DO-217AA, SLUGGER PACKAGE-1

1N6711B 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Obsolete零件包装代码:DO-217
包装说明:O-CXSO-G1针数:1
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.84
应用:GENERAL PURPOSE配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
JEDEC-95代码:DO-217AAJESD-30 代码:O-CXSO-G1
JESD-609代码:e0最大非重复峰值正向电流:375 A
元件数量:1相数:1
端子数量:1最高工作温度:175 °C
最低工作温度:-65 °C最大输出电流:50 A
封装主体材料:CERAMIC, METAL-SEALED COFIRED封装形状:ROUND
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Not Qualified最大重复峰值反向电压:200 V
最大反向恢复时间:5 µs表面贴装:YES
端子面层:TIN LEAD端子形式:GULL WING
端子位置:UNSPECIFIED处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

1N6711B 数据手册

 浏览型号1N6711B的Datasheet PDF文件第2页 
Santa Ana Division  
1N6711B  
Surface Mount Rectifier  
200 Volts  
50 Amps  
5 usec  
PRELIMINARY  
Features  
Passivated mesa structure for very low leakage currents  
Hermetically sealed, low profile ceramic surface mount power package  
Low package inductance  
Very low thermal resistance  
Screening available to equivalent JAN(TX, TXV, S) level according to MIL-PRF 19500  
Available as standard polarity (strap-to-anode: 1N6711B) and reverse polarity (strap-to-cathode: 1N6711BR)  
Maximum Raitings @ 25oC  
DESCRIPTION  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
SYMBOL  
VRRM  
VRWM  
VR  
IF(ave)  
IFSM  
Tj  
Tstg  
Theta JC  
MAX  
200  
200  
200  
50  
UNIT  
Volts  
Volts  
Volts  
Amps  
Amps  
C
DC Blocking Voltage  
Average Rectified Forward Current, Tc  
Nonrepetitive Peak Surge Current, tp= 8.3 ms, half-sinewave  
Junction Temperature Range  
Storage Temperature Range  
Thermal Resistance, Junction to Case:  
375  
-65 to +175  
-65 to +175  
0.65  
C
C/W  
Mechanical Outline  
Slugger™1 (DO-217AA)  
2830 sou th Fairview Street, Santa Ana, CA 92704 USA (714)979.8220 FAX (714)557.5989  
www.MICROSEMI.com  
Data Sheet # MSC1362  
Updated: December 1999  

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