生命周期: | Obsolete | 包装说明: | O-LELF-R2 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
HTS代码: | 8541.10.00.80 | 风险等级: | 5.74 |
其他特性: | METALLURGICALLY BONDED | 应用: | GENERAL PURPOSE |
外壳连接: | ISOLATED | 配置: | SINGLE |
二极管元件材料: | SILICON | 二极管类型: | RECTIFIER DIODE |
JESD-30 代码: | O-LELF-R2 | 元件数量: | 1 |
相数: | 1 | 端子数量: | 2 |
最大输出电流: | 5 A | 封装主体材料: | GLASS |
封装形状: | ROUND | 封装形式: | LONG FORM |
表面贴装: | YES | 技术: | SCHOTTKY |
端子形式: | WRAP AROUND | 端子位置: | END |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
1N6703 | MICROSEMI |
获取价格 |
Rectifier Diode, 1 Phase, 20A, Silicon, G-STRAP-1 | |
1N6703E3 | MICROSEMI |
获取价格 |
Rectifier Diode, 1 Phase, 20A, Silicon, G-STRAP-1 | |
1N6704 | MICROSEMI |
获取价格 |
Rectifier Diode, 1 Phase, 1 Element, 20A, 200V V(RRM), Silicon, DO-217AA, HERMETIC SEALED, | |
1N6704R | MICROSEMI |
获取价格 |
Rectifier Diode, 1 Phase, 1 Element, 20A, 200V V(RRM), Silicon, DO-217AA, HERMETIC SEALED, | |
1N6705 | MICROSEMI |
获取价格 |
ULTRAFAST RECTIFIER | |
1N6705R | MICROSEMI |
获取价格 |
ULTRAFAST RECTIFIER | |
1N6706 | MICROSEMI |
获取价格 |
Rectifier Diode, 1 Phase, 20A, Silicon, G-STRAP-1 | |
1N6706E3 | MICROSEMI |
获取价格 |
Rectifier Diode, 1 Phase, 20A, Silicon, G-STRAP-1 | |
1N6706R | MICROSEMI |
获取价格 |
Rectifier Diode, 1 Phase, 20A, Silicon, G-STRAP-1 | |
1N6707 | MICROSEMI |
获取价格 |
Rectifier Diode, 1 Phase, 20A, Silicon, G-STRAP-1 |