是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Obsolete | 零件包装代码: | DFN |
包装说明: | SMALL OUTLINE, R-PDSO-N8 | 针数: | 8 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
风险等级: | 7.89 | 其他特性: | HIGH RELIABILITY |
外壳连接: | DRAIN | 配置: | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
最小漏源击穿电压: | 30 V | 最大漏极电流 (Abs) (ID): | 2.9 A |
最大漏极电流 (ID): | 2.9 A | 最大漏源导通电阻: | 0.12 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-30 代码: | R-PDSO-N8 |
JESD-609代码: | e4 | 湿度敏感等级: | 1 |
元件数量: | 2 | 端子数量: | 8 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | 260 |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 2.45 W |
最大脉冲漏极电流 (IDM): | 13 A | 认证状态: | Not Qualified |
子类别: | FET General Purpose Power | 表面贴装: | YES |
端子面层: | Nickel/Palladium/Gold (Ni/Pd/Au) | 端子形式: | NO LEAD |
端子位置: | DUAL | 处于峰值回流温度下的最长时间: | 40 |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
ZXMN3B01F | DIODES |
获取价格 |
30V N-CHANNEL ENHANCEMENT MODE MOSFET 2.5V GATE DRIVE | |
ZXMN3B01F | ZETEX |
获取价格 |
30V N-CHANNEL ENHANCEMENT MODE MOSFET 2.5V GATE DRIVE | |
ZXMN3B01F | TYSEMI |
获取价格 |
30V N-CHANNEL ENHANCEMENT MODE MOSFET 2.5V GATE DRIVE | |
ZXMN3B01FTA | DIODES |
获取价格 |
30V N-CHANNEL ENHANCEMENT MODE MOSFET 2.5V GATE DRIVE | |
ZXMN3B01FTA | TYSEMI |
获取价格 |
30V N-CHANNEL ENHANCEMENT MODE MOSFET 2.5V GATE DRIVE | |
ZXMN3B01FTA | ZETEX |
获取价格 |
30V N-CHANNEL ENHANCEMENT MODE MOSFET 2.5V GATE DRIVE | |
ZXMN3B01FTC | DIODES |
获取价格 |
30V N-CHANNEL ENHANCEMENT MODE MOSFET 2.5V GATE DRIVE | |
ZXMN3B01FTC | ZETEX |
获取价格 |
30V N-CHANNEL ENHANCEMENT MODE MOSFET 2.5V GATE DRIVE | |
ZXMN3B01FTC | TYSEMI |
获取价格 |
30V N-CHANNEL ENHANCEMENT MODE MOSFET 2.5V GATE DRIVE | |
ZXMN3B04N8 | DIODES |
获取价格 |
30V N-CHANNEL ENHANCEMENT MODE MOSFET 2.5V GATE DRIVE |