是否Rohs认证: | 符合 | 生命周期: | Transferred |
包装说明: | SMALL OUTLINE, R-PDSO-G3 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | 风险等级: | 5.15 |
Is Samacsys: | N | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 30 V | 最大漏极电流 (ID): | 2.9 A |
最大漏源导通电阻: | 0.08 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码: | R-PDSO-G3 | JESD-609代码: | e3 |
湿度敏感等级: | 1 | 元件数量: | 1 |
端子数量: | 3 | 工作模式: | ENHANCEMENT MODE |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | 260 |
极性/信道类型: | N-CHANNEL | 认证状态: | Not Qualified |
表面贴装: | YES | 端子面层: | Matte Tin (Sn) |
端子形式: | GULL WING | 端子位置: | DUAL |
处于峰值回流温度下的最长时间: | 40 | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
ZXMN3B14FTC | DIODES |
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30V N-CHANNEL ENHANCEMENT MODE MOSFET 2.5V GATE DRIVE |
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ZXMN3B14FTC | TYSEMI |
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30V N-CHANNEL ENHANCEMENT MODE MOSFET 2.5V GATE DRIVE |
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ZXMN3B14FTC | ZETEX |
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30V N-CHANNEL ENHANCEMENT MODE MOSFET 2.5V GATE DRIVE |
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ZXMN3F30FH | ZETEX |
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30V SOT23 N-channel enhancement mode MOSFET |
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ZXMN3F30FH | DIODES |
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30V SOT23 N-channel enhancement mode MOSFET |
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ZXMN3F30FH | TYSEMI |
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30V SOT23 N-channel enhancement mode MOSFET Low on-resistance |
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ZXMN3F30FHTA | TYSEMI |
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30V SOT23 N-channel enhancement mode MOSFET Low on-resistance |
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ZXMN3F30FHTA | DIODES |
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30V SOT23 N-channel enhancement mode MOSFET |
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ZXMN3F30FHTA | ZETEX |
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30V SOT23 N-channel enhancement mode MOSFET |
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ZXMN3F318DN8 | DIODES |
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30V SO8 Asymmetrical dual N-channel enhancement mode |
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