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ZXMN3B04N8TA PDF预览

ZXMN3B04N8TA

更新时间: 2024-09-12 21:53:59
品牌 Logo 应用领域
捷特科 - ZETEX 晶体栅极晶体管开关脉冲光电二极管栅极驱动
页数 文件大小 规格书
7页 163K
描述
30V N-CHANNEL ENHANCEMENT MODE MOSFET 2.5V GATE DRIVE

ZXMN3B04N8TA 技术参数

是否Rohs认证: 符合生命周期:Transferred
包装说明:SO-8Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.17
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:30 V
最大漏极电流 (ID):7.2 A最大漏源导通电阻:0.025 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PDSO-G8
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:8
工作模式:ENHANCEMENT MODE封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:N-CHANNEL
最大脉冲漏极电流 (IDM):45 A认证状态:Not Qualified
表面贴装:YES端子面层:Matte Tin (Sn)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:40晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

ZXMN3B04N8TA 数据手册

 浏览型号ZXMN3B04N8TA的Datasheet PDF文件第2页浏览型号ZXMN3B04N8TA的Datasheet PDF文件第3页浏览型号ZXMN3B04N8TA的Datasheet PDF文件第4页浏览型号ZXMN3B04N8TA的Datasheet PDF文件第5页浏览型号ZXMN3B04N8TA的Datasheet PDF文件第6页浏览型号ZXMN3B04N8TA的Datasheet PDF文件第7页 
ZXMN3B04N8  
30V N-CHANNEL ENHANCEMENT MODE MOSFET 2.5V GATE DRIVE  
SUMMARY  
V
=30V : R  
(
)=0.025 ; I = 8.9A  
(BR)DSS  
DS on D  
DESCRIPTION  
This new generation of Trench MOSFETs from Zetex utilizes a unique  
structure that com bines the benefits of low on-resistance with fast switching  
speed. This m akes them ideal for high efficiency, low voltage, power  
m anagem ent applications.  
SO8  
FEATURES  
Low on-resistance  
Fast switching speed  
Low threshold  
Low gate drive  
Low profile SOIC package  
APPLICATIONS  
DC - DC converters  
Power m anagem ent functions  
Disconnect switches  
Motor control  
ORDERING INFORMATION  
DEVICE  
REEL  
SIZE  
TAPE  
WIDTH  
QUANTITY  
PER REEL  
ZXMN3B04N8TA  
7”  
12m m  
12m m  
500 units  
ZXMN3B04N8TC  
13”  
2500 units  
Top View  
DEVICE MARKING  
ZXMN  
3B04  
ISSUE 2 - MAY 2004  
1
S E M IC O N D U C T O R S  

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