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ZXMN3B14F_15 PDF预览

ZXMN3B14F_15

更新时间: 2024-11-25 00:31:19
品牌 Logo 应用领域
美台 - DIODES 栅极驱动
页数 文件大小 规格书
7页 222K
描述
30V N-CHANNEL ENHANCEMENT MODE MOSFET 2.5V GATE DRIVE

ZXMN3B14F_15 数据手册

 浏览型号ZXMN3B14F_15的Datasheet PDF文件第2页浏览型号ZXMN3B14F_15的Datasheet PDF文件第3页浏览型号ZXMN3B14F_15的Datasheet PDF文件第4页浏览型号ZXMN3B14F_15的Datasheet PDF文件第5页浏览型号ZXMN3B14F_15的Datasheet PDF文件第6页浏览型号ZXMN3B14F_15的Datasheet PDF文件第7页 
ZXMN3B14F  
30V N-CHANNEL ENHANCEMENT MODE MOSFET 2.5V GATE DRIVE  
SUMMARY  
V
=30V : R  
(
)=0.08 ; I =3.5A  
(BR)DSS  
DS on D  
DESCRIPTION  
This new generation of Trench MOSFETs from Zetex utilizes a unique structure that  
combines the benefits of low on-resistance with fast switching speed. This makes  
them ideal for high efficiency, low voltage, power management applications.  
FEATURES  
PACKAGE  
Low on-resistance  
Fast switching speed  
Low threshold  
Low gate drive  
SOT23 package  
APPLICATIONS  
DC-DC converters  
Power management functions  
Disconnect switches  
Motor control  
PINOUT  
ORDERING INFORMATION  
DEVICE  
REEL  
SIZE  
TAPE  
WIDTH  
QUANTITY  
PER REEL  
ZXMN3B14FTA  
7”  
8mm  
8mm  
3,000 units  
ZXMN3B14FTC  
13”  
10,000 units  
DEVICE MARKING  
3B4  
ISSUE 2 - JANUARY 2006  
1
SEMICONDUCTORS  

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