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ZVN4306A PDF预览

ZVN4306A

更新时间: 2024-11-30 07:42:43
品牌 Logo 应用领域
美台 - DIODES 晶体小信号场效应晶体管开关
页数 文件大小 规格书
3页 141K
描述
N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET

ZVN4306A 技术参数

是否无铅:含铅是否Rohs认证:符合
生命周期:Active零件包装代码:TO-92
包装说明:CYLINDRICAL, O-PBCY-W3针数:3
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8541.21.00.95Factory Lead Time:17 weeks
风险等级:0.67Is Samacsys:N
配置:SINGLE最小漏源击穿电压:60 V
最大漏极电流 (Abs) (ID):1.1 A最大漏极电流 (ID):1.1 A
最大漏源导通电阻:0.33 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
最大反馈电容 (Crss):30 pFJESD-30 代码:O-PBCY-W3
JESD-609代码:e3元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:CYLINDRICAL
峰值回流温度(摄氏度):260极性/信道类型:N-CHANNEL
认证状态:Not Qualified子类别:FET General Purpose Powers
表面贴装:NO端子面层:Matte Tin (Sn)
端子形式:WIRE端子位置:BOTTOM
处于峰值回流温度下的最长时间:40晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

ZVN4306A 数据手册

 浏览型号ZVN4306A的Datasheet PDF文件第2页浏览型号ZVN4306A的Datasheet PDF文件第3页 
N-CHANNEL ENHANCEMENT  
MODE VERTICAL DMOS FET  
ZVN4306A  
ISSUE 3 – JULY 94  
FEATURES  
*
*
*
60 Volt VDS  
RDS(on)= 0.33  
Spice model available  
D
G
S
APPLICATIONS  
*
*
DC-DC convertors  
Solenoids / relay drivers for automotive  
E-Line  
TO92 Compatible  
ABSOLUTE MAXIMUM RATINGS.  
PARAMETER  
SYMBOL  
VALUE  
UNIT  
Drain-Source Voltage  
VDS  
ID  
60  
1.1  
1.3  
V
A
A
Continuous Drain Current at Tamb=25°C  
Practical Continuous Drain Current at  
IDP  
T
amb=25°C  
Pulsed Drain Current  
IDM  
15  
± 20  
A
V
Gate Source Voltage  
VGS  
Power Dissipation at Tamb=25°C  
Practical Power Dissipation at Tamb=25°C*  
Operating and Storage Temperature Range  
Ptot  
850  
mW  
W
Ptotp  
Tj:Tstg  
1.13  
-55 to +150  
°C  
*The power which can be dissipated assuming the device is mounted in a typical manner on a P.C.B.  
with copper equal to 1 inch square minimum  
ELECTRICAL CHARACTERISTICS (at T  
= 25°C unless otherwise stated).  
amb  
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.  
PARAMETER  
Drain-Source  
Breakdown Voltage  
BVDSS  
60  
V
ID=1mA, VGS=0V  
Gate-Source  
Threshold Voltage  
VGS(th)  
1.3  
3
V
ID=1mA, VDS= VGS  
Gate-Body Leakage  
IGSS  
IDSS  
100  
nA  
V
GS=± 20V, VDS=0V  
Zero Gate Voltage  
Drain Current  
10  
100  
V
V
DS=60V, VGS=0  
DS=48V, VGS=0V, T=125°C(2)  
µA  
µA  
On-State Drain  
Current(1)  
ID(on)  
12  
A
VDS=10V, VGS=10V  
Static Drain-Source  
On-State Resistance  
(1)  
RDS(on)  
0.22  
0.32  
0.33  
0.45  
V
V
GS=10V,ID=3A  
GS=5V, ID=1.5A  
Forward  
gfs  
700  
mS  
VDS=25V,ID=3A  
Transconductance  
(1)(2)  
3-390  

ZVN4306A 替代型号

型号 品牌 替代类型 描述 数据表
MMBF170-7-F DIODES

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