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ZVN4306GV PDF预览

ZVN4306GV

更新时间: 2024-01-10 12:57:26
品牌 Logo 应用领域
美台 - DIODES 晶体晶体管功率场效应晶体管开关脉冲光电二极管局域网
页数 文件大小 规格书
4页 119K
描述
SOT223 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET

ZVN4306GV 技术参数

是否Rohs认证: 符合生命周期:Active
零件包装代码:SOT-223包装说明:SMALL OUTLINE, R-PDSO-G4
针数:4Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.29.00.95
风险等级:5.08Is Samacsys:N
其他特性:AVALANCHE RATED外壳连接:DRAIN
配置:SINGLE最小漏源击穿电压:60 V
最大漏极电流 (Abs) (ID):2.1 A最大漏极电流 (ID):2.1 A
最大漏源导通电阻:0.33 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PDSO-G4JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:4工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):3 W最大脉冲漏极电流 (IDM):15 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:YES端子面层:MATTE TIN
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:40晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

ZVN4306GV 数据手册

 浏览型号ZVN4306GV的Datasheet PDF文件第2页浏览型号ZVN4306GV的Datasheet PDF文件第3页浏览型号ZVN4306GV的Datasheet PDF文件第4页 
SOT223 N-CHANNEL ENHANCEMENT  
MODE VERTICAL DMOS FET  
ZVN4306GV  
ISSUE 1 - APRIL 1998  
FEATURES  
*
*
*
BVDSS=60V  
DS(ON) = 0.33  
Repetitive Avalanche Rating  
D
R
APPLICATIONS  
S
*
*
*
DC - DC Converters  
Solenoids/Relay Drivers for Automotive  
Stepper Motor Drivers  
D
G
PARTMARKING DETAIL -  
ZVN4306V  
ABSOLUTE MAXIMUM RATINGS.  
PARAMETER  
SYMBOL  
VDS  
VALUE  
UNIT  
V
Drain-Source Voltage  
60  
Continuous Drain Current at Tamb=25°C  
Pulsed Drain Current  
ID  
2.1  
A
IDM  
15  
A
Gate Source Voltage  
VGS  
V
± 20  
Power Dissipation at Tamb=25°C  
Avalanche Current-Repetitive  
Avalanche Energy-Repetitive  
Operating and Storage Temperature Range  
Ptot  
3
W
A
IAR  
1
25  
EAR  
mJ  
°C  
Tj:Tstg  
-55 to +150  

ZVN4306GV 替代型号

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ZVN4306GVTC DIODES

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