是否Rohs认证: | 符合 | 生命周期: | Transferred |
Reach Compliance Code: | not_compliant | ECCN代码: | EAR99 |
HTS代码: | 8541.29.00.95 | 风险等级: | 5.09 |
Is Samacsys: | N | 其他特性: | AVALANCHE RATED |
外壳连接: | DRAIN | 配置: | SINGLE |
最小漏源击穿电压: | 60 V | 最大漏极电流 (Abs) (ID): | 2.1 A |
最大漏极电流 (ID): | 2.1 A | 最大漏源导通电阻: | 0.33 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-30 代码: | R-PDSO-G4 |
JESD-609代码: | e3 | 湿度敏感等级: | 1 |
元件数量: | 1 | 端子数量: | 4 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | 260 |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 3 W |
最大脉冲漏极电流 (IDM): | 15 A | 认证状态: | Not Qualified |
子类别: | FET General Purpose Power | 表面贴装: | YES |
端子面层: | Matte Tin (Sn) | 端子形式: | GULL WING |
端子位置: | DUAL | 处于峰值回流温度下的最长时间: | 40 |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
ZVN4306GVTA | DIODES |
获取价格 |
Power Field-Effect Transistor, 2.1A I(D), 60V, 0.33ohm, 1-Element, N-Channel, Silicon, Met |
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ZVN4306GVTC | DIODES |
获取价格 |
Power Field-Effect Transistor, 2.1A I(D), 60V, 0.33ohm, 1-Element, N-Channel, Silicon, Met |
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ZVN4306GVTC | ZETEX |
获取价格 |
Power Field-Effect Transistor, 2.1A I(D), 60V, 0.33ohm, 1-Element, N-Channel, Silicon, Met |
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ZVN4310A | ZETEX |
获取价格 |
N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET |
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ZVN4310A | DIODES |
获取价格 |
N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET |
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ZVN4310ASM | ZETEX |
获取价格 |
Small Signal Field-Effect Transistor, 0.9A I(D), 100V, 1-Element, N-Channel, Silicon, Meta |
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ZVN4310ASMTA | ZETEX |
获取价格 |
Small Signal Field-Effect Transistor, 0.9A I(D), 100V, 1-Element, N-Channel, Silicon, Meta |
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ZVN4310ASMTC | ZETEX |
获取价格 |
Small Signal Field-Effect Transistor, 0.9A I(D), 100V, 1-Element, N-Channel, Silicon, Meta |
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ZVN4310ASTOA | ZETEX |
获取价格 |
Small Signal Field-Effect Transistor, 0.9A I(D), 100V, 1-Element, N-Channel, Silicon, Meta |
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ZVN4310ASTOB | DIODES |
获取价格 |
Small Signal Field-Effect Transistor, 0.9A I(D), 100V, 1-Element, N-Channel, Silicon, Meta |
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