Datasheet > YJB011G10AQ

YJB011G10AQ

更新时间： 2024-09-16 17:01:27

品牌	Logo	应用领域
扬杰 - YANGJIE		/
页数	文件大小	规格书
8页	465K
描述
TO-263

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YJB011G10AQ 数据手册

RoHS

COMPLIANT

YJB011G10AQ

N-Channel Enhancement Mode Field Effect Transistor

Product Summary

● V_DS

100V

56A

● I_D

● R_DS(ON)( at V_GS=10V)

● R_DS(ON)( at V_GS=4.5V)

● 100% EAS Tested

● 100% ▽V^DSTested

＜11mΩ

＜16mΩ

General Description

● Low R_DS(on)& FOM

● Extremely low switching loss

● Excellent stability and uniformity

● Fast switching and soft recovery

● Part no. with suffix “Q” means AEC-Q101 qualified

Applications

● Power switching application

● Hard switched and high frequency circuits

● Uninterruptible power supply

● DC-DC convertor

● 12V 24V 48V Automotive systems

Absolute Maximum Ratings (T =25℃ unless otherwise noted)

■

Parameter

Symbol

Limit

100

±20

Unit

Drain-source Voltage

Gate-source Voltage

V_DS

V_GS

T_C=25℃

T_C=100℃

T_A=25℃

Drain Current

I_D

T_A=100℃

Pulsed Drain Current ^A

Avalanche energy ^B

I_DM

224

100

EAS

T_C=25℃

T_C=100℃

T_A=25℃

Total Power Dissipation ^C

P_D

3.6

1.8

T_A=100℃

Junction and Storage Temperature Range

T_J,T_STG

-55～+175

℃

1 / 8

Yangzhou Yangjie Electronic Technology Co., Ltd.

S-B3282

Rev.1.0,28-Dec-23

www.21yangjie.com

12 3 4 5 6 7 8

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