RoHS
COMPLIANT
YJB130G10B
N-Channel Enhancement Mode Field Effect Transistor
Product Summary
● VDS
100V
● ID
130A
● RDS(ON)( at VGS=10V)
● RDS(ON)( at VGS=6V)
● 100% EAS Tested
● 100% ▽VDS Tested
<5.5mohm
<6.5mohm
General Description
● Split gate trench MOSFET technology
● Excellent package for heat dissipation
● High density cell design for low RDS(ON)
● Moisture Sensitivity Level 1
● Epoxy Meets UL 94 V-0 Flammability Rating
● Halogen Free
Applications
● Power switching application
● Uninterruptible power supply
● DC-DC convertor
Absolute Maximum Ratings (T =25℃ unless otherwise noted)
■
A
Parameter
Symbol
Limit
100
±20
15
Unit
V
Drain-source Voltage
Gate-source Voltage
VDS
VGS
V
TA=25℃
9
TA=100℃
TC=25℃
Drain Current
ID
A
130
82
TC =100℃
Pulsed Drain Current A
Avalanche energy B
IDM
520
290
2.7
A
EAS
mJ
TA=25℃
TA=100℃
TC=25℃
TC =100℃
1.1
Total Power Dissipation C
PD
W
178
71
Junction and Storage Temperature Range
TJ ,TSTG
-55~+150
℃
■Thermal resistance
Parameter
Symbol
RθJA
Typ
35
Max
45
Units
Thermal Resistance Junction-to-Ambient D
Thermal Resistance Junction-to-Case
Steady-State
Steady-State
℃/W
RθJC
0.55
0.7
Ordering Information (Example)
■
PACKING
MINIMUM
PACKAGE(pcs)
INNER BOX
QUANTITY(pcs)
OUTER CARTON
QUANTITY(pcs)
DELIVERY
MODE
PREFERED P/N
Marking
CODE
YJB130G10B
F2
YJB130G10B
800
/
8000
13“ reel
1 / 8
S-E192
Yangzhou Yangjie Electronic Technology Co., Ltd.
www.21yangjie.com
Rev.1.1,02-Mar-22