5秒后页面跳转
YJB130G10B PDF预览

YJB130G10B

更新时间: 2024-09-16 17:01:59
品牌 Logo 应用领域
扬杰 - YANGJIE /
页数 文件大小 规格书
8页 335K
描述
TO-263

YJB130G10B 数据手册

 浏览型号YJB130G10B的Datasheet PDF文件第2页浏览型号YJB130G10B的Datasheet PDF文件第3页浏览型号YJB130G10B的Datasheet PDF文件第4页浏览型号YJB130G10B的Datasheet PDF文件第5页浏览型号YJB130G10B的Datasheet PDF文件第6页浏览型号YJB130G10B的Datasheet PDF文件第7页 
RoHS  
COMPLIANT  
YJB130G10B  
N-Channel Enhancement Mode Field Effect Transistor  
Product Summary  
● VDS  
100V  
● ID  
130A  
● RDS(ON)( at VGS=10V)  
● RDS(ON)( at VGS=6V)  
● 100% EAS Tested  
● 100% VDS Tested  
5.5mohm  
6.5mohm  
General Description  
● Split gate trench MOSFET technology  
● Excellent package for heat dissipation  
● High density cell design for low RDS(ON)  
● Moisture Sensitivity Level 1  
● Epoxy Meets UL 94 V-0 Flammability Rating  
● Halogen Free  
Applications  
● Power switching application  
● Uninterruptible power supply  
● DC-DC convertor  
Absolute Maximum Ratings (T =25unless otherwise noted)  
A
Parameter  
Symbol  
Limit  
100  
±20  
15  
Unit  
V
Drain-source Voltage  
Gate-source Voltage  
VDS  
VGS  
V
TA=25℃  
9
TA=100℃  
TC=25℃  
Drain Current  
ID  
A
130  
82  
TC =100℃  
Pulsed Drain Current A  
Avalanche energy B  
IDM  
520  
290  
2.7  
A
EAS  
mJ  
TA=25℃  
TA=100℃  
TC=25℃  
TC =100℃  
1.1  
Total Power Dissipation C  
PD  
W
178  
71  
Junction and Storage Temperature Range  
TJ ,TSTG  
-55+150  
Thermal resistance  
Parameter  
Symbol  
RθJA  
Typ  
35  
Max  
45  
Units  
Thermal Resistance Junction-to-Ambient D  
Thermal Resistance Junction-to-Case  
Steady-State  
Steady-State  
/W  
RθJC  
0.55  
0.7  
Ordering Information (Example)  
PACKING  
MINIMUM  
PACKAGE(pcs)  
INNER BOX  
QUANTITY(pcs)  
OUTER CARTON  
QUANTITY(pcs)  
DELIVERY  
MODE  
PREFERED P/N  
Marking  
CODE  
YJB130G10B  
F2  
YJB130G10B  
800  
/
8000  
13“ reel  
1 / 8  
S-E192  
Yangzhou Yangjie Electronic Technology Co., Ltd.  
www.21yangjie.com  
Rev.1.1,02-Mar-22